Gate Insulator for High Mobility Oxide TFT

Type:
Conference Proceedings
Info:
ECS Trans. 2014 volume 64, issue 10, 123-128
Date:
2014-10-07
DOI:
http://dx.doi.org/10.1149/06410.0123ecst

Author Information

Name Institution
Sang-Hee Ko ParkKorea Advanced Institute of Science and Technology

Films

Plasma SiO2

Hardware used: Unknown
Bis(EthylMethylAmino)Silane, BEMAS, (EtMeN)2SiH2
CAS#: 1011514-41-2
Where to buy precursor
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature = 250C

Thermal Al2O3

Hardware used: Unknown
TMA, trimethyl aluminum, AlMe3
CAS#: 75-24-1
Where to buy precursor
H2O, Water
CAS#: 7732-18-5
Deposition Temperature Range N/A

Film/Plasma Properties

Characteristic: Mobility
Analysis: -
Diagnostic: -

Characteristic: Threshold Voltage
Analysis: -
Diagnostic: -

Characteristic: Subthreshold Swing
Analysis: -
Diagnostic: -

Substrates

Keywords

Gate Dielectric
TFT, Thin Film Transistor

Notes

252