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Low-temperature growth of gallium oxide thin films by plasma-enhanced atomic layer deposition
Low-temperature plasma-enhanced atomic layer deposition of 2-D MoS2: large area, thickness control and tuneable morphology
Microstructure and Interfaces of Ultra-Thin Epitaxial AlN Films Grown by Plasma-Enhanced Atomic Layer Deposition at Relatively Low Temperatures
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Gate Insulator for High Mobility Oxide TFT
Type:
Conference Proceedings
Info:
ECS Trans. 2014 volume 64, issue 10, 123-128
Date:
2014-10-07
Author Information
| Name | Institution |
|---|---|
| Sang-Hee Ko Park | Korea Advanced Institute of Science and Technology |
Films
Film/Plasma Properties
Characteristic: Mobility
Analysis: -
Characteristic: Threshold Voltage
Analysis: -
Characteristic: Subthreshold Swing
Analysis: -
Substrates
Keywords
| Gate Dielectric |
| TFT, Thin Film Transistor |
Notes
| 252 |