Publication Information

Title:
Gate Insulator for High Mobility Oxide TFT
Type:
Conference Proceedings
Info:
ECS Trans. 2014 volume 64, issue 10, 123-128
Date:
2014-10-07

Author Information

Name Institution
Sang-Hee Ko ParkKorea Advanced Institute of Science and Technology

Films

Plasma SiO2


Thermal Al2O3


Film/Plasma Properties

Characteristic: Mobility
Analysis: -

Characteristic: Threshold Voltage
Analysis: -

Characteristic: Subthreshold Swing
Analysis: -

Substrates

Keywords

Gate Dielectric
TFT, Thin Film Transistor

Notes

252