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Initial and steady-state Ru growth by atomic layer deposition studied by in situ Angle Resolved X-ray Photoelectron Spectroscopy
Innovative remote plasma source for atomic layer deposition for GaN devices
Influence of plasma species on the early-stage growth kinetics of epitaxial InN grown by plasma-enhanced atomic layer deposition
Optical in situ monitoring of plasma-enhanced atomic layer deposition process
The role of active species in the N2 and N2-H2 RF afterglows on selective surface nitriding of ALD-grown TiO2 films
Gate Insulator for High Mobility Oxide TFT
Type:
Conference Proceedings
Info:
ECS Trans. 2014 volume 64, issue 10, 123-128
Date:
2014-10-07
Author Information
| Name | Institution |
|---|---|
| Sang-Hee Ko Park | Korea Advanced Institute of Science and Technology |
Films
Film/Plasma Properties
Characteristic: Mobility
Analysis: -
Characteristic: Threshold Voltage
Analysis: -
Characteristic: Subthreshold Swing
Analysis: -
Substrates
Keywords
| Gate Dielectric |
| TFT, Thin Film Transistor |
Notes
| 252 |