Publication Information

Title: Gate Insulator for High Mobility Oxide TFT

Type: Conference Proceedings

Info: ECS Trans. 2014 volume 64, issue 10, 123-128

Date: 2014-10-07

DOI: http://dx.doi.org/10.1149/06410.0123ecst

Author Information

Name

Institution

Sang-Hee Ko Park

Korea Advanced Institute of Science and Technology

Films

Plasma SiO2 using Unknown

Deposition Temperature = 250C

Bis(EthylMethylAmino)Silane, BEMAS, (EtMeN)2SiH2

1011514-41-2

Where to buy precursor

Oxygen, O2

7782-44-7

Thermal Al2O3 using Unknown

Deposition Temperature Range N/A

TMA, Trimethyl Aluminum, Trimethylalane, Trimethylaluminium, Aluminium Trimethyl, Aluminum Trimethanide, Al(CH3)3, AlMe3, Al2(CH3)6, Al2Me6

75-24-1

Where to buy precursor

Water, H2O

7732-18-5

Film/Plasma Properties

Characteristic

Analysis

Diagnostic

Mobility

Unknown

Unknown

Threshold Voltage

Unknown

Unknown

Subthreshold Swing

Unknown

Unknown

Substrates

Keywords

Gate Dielectric

TFT, Thin Film Transistor

Notes

252


Mark Sowa

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