Publication Information

Title: Gate Insulator for High Mobility Oxide TFT

Type: Conference Proceedings

Info: ECS Trans. 2014 volume 64, issue 10, 123-128

Date: 2014-10-07

DOI: http://dx.doi.org/10.1149/06410.0123ecst

Author Information

Name

Institution

Korea Advanced Institute of Science and Technology

Films

Plasma SiO2 using Unknown

Deposition Temperature = 250C

1011514-41-2

7782-44-7

Thermal Al2O3 using Unknown

Deposition Temperature Range N/A

75-24-1

7732-18-5

Film/Plasma Properties

Characteristic

Analysis

Diagnostic

Mobility

Unknown

Unknown

Threshold Voltage

Unknown

Unknown

Subthreshold Swing

Unknown

Unknown

Substrates

Keywords

Gate Dielectric

TFT, Thin Film Transistor

Notes

252



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