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Publication Information
Title:
Gate Insulator for High Mobility Oxide TFT
Type:
Conference Proceedings
Info:
ECS Trans. 2014 volume 64, issue 10, 123-128
Date:
2014-10-07
Author Information
Name | Institution |
---|---|
Sang-Hee Ko Park | Korea Advanced Institute of Science and Technology |
Films
Film/Plasma Properties
Characteristic: Mobility
Analysis: -
Characteristic: Threshold Voltage
Analysis: -
Characteristic: Subthreshold Swing
Analysis: -
Substrates
Keywords
Gate Dielectric |
TFT, Thin Film Transistor |
Notes
252 |
Popular Precursors
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