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Infrared single-photon sensitivity in atomic layer deposited superconducting nanowires
Effects of deposition temperature on the wear behavior and material properties of plasma enhanced atomic layer deposition (PEALD) titanium vanadium nitride thin films
Gallium nitride thin films by microwave plasma-assisted ALD
Ferroelectricity of HfxZr1-xO2 thin films fabricated by 300°C low temperature process with plasma-enhanced atomic layer deposition
Hydrogen-induced abstraction mechanism of surface methyl groups in atomic-layer-epitaxy of germanium
Gate Insulator for High Mobility Oxide TFT
Type:
Conference Proceedings
Info:
ECS Trans. 2014 volume 64, issue 10, 123-128
Date:
2014-10-07
Author Information
| Name | Institution |
|---|---|
| Sang-Hee Ko Park | Korea Advanced Institute of Science and Technology |
Films
Film/Plasma Properties
Characteristic: Mobility
Analysis: -
Characteristic: Threshold Voltage
Analysis: -
Characteristic: Subthreshold Swing
Analysis: -
Substrates
Notes
| 252 |