Deposition and Characterization of RP-ALD SiO2 Thin Films with Different Oxygen Plasma Powers

Type:
Journal
Info:
Nanomaterials 2021, 11, 1173
Date:
2021-04-26
DOI:
http://dx.doi.org/10.3390/nano11051173

Author Information

Name Institution
Xiao-Ying ZhangXiamen University
Yue YangXiamen University
Zhi-Xuan ZhangXiamen University
Xin-Peng GengXiamen University
Chia-Hsun HsuXiamen University
Wan-Yu WuDa-Yeh University
Shui-Yang LienXiamen University
Wen-Zhang ZhuXiamen University

Films

Plasma SiO2

Hardware used: Picosun R200
BDEAS, SAM-24, Bis(diethylamino)silane, (Et2N)2SiH2
CAS#: 27804-64-4
Where to buy precursor
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature = 250C

Film/Plasma Properties

Characteristic: Plasma Species
Analysis: OES, Optical Emission Spectroscopy
Diagnostic: -

Characteristic: Thickness
Analysis: Ellipsometry
Diagnostic: SENTECH SE800

Characteristic: Refractive Index
Analysis: Ellipsometry
Diagnostic: SENTECH SE800

Characteristic: Morphology, Roughness, Topography
Analysis: AFM, Atomic Force Microscopy
Diagnostic: -

Characteristic: Wet Etch Resistance
Analysis: -
Diagnostic: -

Characteristic: Leakage Current
Analysis: C-AFM, Conductive Atomic Force Microscopy
Diagnostic: -

Characteristic: Chemical Composition, Impurities
Analysis: FTIR, Fourier Transform InfraRed spectroscopy
Diagnostic: -

Characteristic: Wetting Angle
Analysis: Contact Angle Measurement
Diagnostic: -

Characteristic: Surface Free Energy
Analysis: Contact Angle Measurement
Diagnostic: -

Substrates

Si(100)

Notes

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