Deposition and Characterization of RP-ALD SiO2 Thin Films with Different Oxygen Plasma Powers

Type:
Journal
Info:
Nanomaterials 2021, 11, 1173
Date:
2021-04-26

Author Information

Name Institution
Xiao-Ying ZhangXiamen University
Yue YangXiamen University
Zhi-Xuan ZhangXiamen University
Xin-Peng GengXiamen University
Chia-Hsun HsuXiamen University
Wan-Yu WuDa-Yeh University
Shui-Yang LienXiamen University
Wen-Zhang ZhuXiamen University

Films

Plasma SiO2


Film/Plasma Properties

Characteristic: Plasma Species
Analysis: OES, Optical Emission Spectroscopy

Characteristic: Thickness
Analysis: Ellipsometry

Characteristic: Refractive Index
Analysis: Ellipsometry

Characteristic: Morphology, Roughness, Topography
Analysis: AFM, Atomic Force Microscopy

Characteristic: Wet Etch Resistance
Analysis: -

Characteristic: Leakage Current
Analysis: C-AFM, Conductive Atomic Force Microscopy

Characteristic: Chemical Composition, Impurities
Analysis: FTIR, Fourier Transform InfraRed spectroscopy

Characteristic: Wetting Angle
Analysis: Contact Angle Measurement

Characteristic: Surface Free Energy
Analysis: Contact Angle Measurement

Substrates

Si(100)

Notes

1627