PEALD of SiO2 and Al2O3 Thin Films on Polypropylene: Investigations of the Film Growth at the Interface, Stress, and Gas Barrier Properties of Dyads

Type:
Journal
Info:
ACS Appl. Mater. Interfaces, 2018, 10 (8), pp 7422-7434
Date:
2018-01-17
DOI:
http://dx.doi.org/10.1021/acsami.7b14916

Author Information

Name Institution
Maximilian GebhardRuhr-University Bochum
Lukas MaiRuhr-University Bochum
Lars BankoRuhr-University Bochum
Felix MitschkerRuhr-University Bochum
Christian HoppeUniversity of Paderborn
Montgomery JaritzRWTH Aachen University
Dennis KirchheimRWTH Aachen University
Christoph ZekornRWTH Aachen University
Teresa de los ArcosUniversity of Paderborn
Dario GrochlaRuhr-University Bochum
Rainer DahlmannRWTH Aachen University
G. GrundmeierUniversity of Paderborn
Peter AwakowiczRuhr-University Bochum
Alfred LudwigRuhr-University Bochum
Anjana DeviRuhr-University Bochum

Films

Plasma SiO2

Hardware used: Custom
BDEAS, SAM-24, Bis(diethylamino)silane, (Et2N)2SiH2
CAS#: 27804-64-4
Where to buy precursor
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature = 25C

Plasma Al2O3

Hardware used: Custom
TMA, Trimethylaluminum, Trimethylalumane, AlMe3, Al(CH3)3
CAS#: 75-24-1
Where to buy precursor
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature = 25C

Plasma Al2O3

Hardware used: Custom
DMAD, [3-(Dimethylamino)propyl](dimethyl) aluminium
CAS#: 0-0-0
Where to buy precursor
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature = 25C

Film/Plasma Properties

Characteristic: Thickness
Analysis: Ellipsometry
Diagnostic: -

Characteristic: Stress
Analysis: -
Diagnostic: -

Characteristic: Damage, Defects
Analysis: -
Diagnostic: -

Characteristic: Oxygen Transmission Rate (OTR)
Analysis: -
Diagnostic: -

Characteristic: Morphology, Roughness, Topography
Analysis: AFM, Atomic Force Microscopy
Diagnostic: -

Characteristic: Morphology, Roughness, Topography
Analysis: SEM, Scanning Electron Microscopy
Diagnostic: -

Substrates

Si(100)
Polypropylene

Notes

1107