Publication Information

Title: PEALD of SiO2 and Al2O3 Thin Films on Polypropylene: Investigations of the Film Growth at the Interface, Stress, and Gas Barrier Properties of Dyads

Type: Journal

Info: ACS Appl. Mater. Interfaces, 2018, 10 (8), pp 7422-7434

Date: 2018-01-17

DOI: http://dx.doi.org/10.1021/acsami.7b14916

Author Information

Name

Institution

Ruhr-University Bochum

Ruhr-University Bochum

Ruhr-University Bochum

Ruhr-University Bochum

University of Paderborn

RWTH Aachen University

RWTH Aachen University

RWTH Aachen University

University of Paderborn

Ruhr-University Bochum

RWTH Aachen University

University of Paderborn

Ruhr-University Bochum

Ruhr-University Bochum

Ruhr-University Bochum

Films

Plasma SiO2 using Custom

Deposition Temperature = 25C

27804-64-4

7782-44-7

Plasma Al2O3 using Custom

Deposition Temperature = 25C

75-24-1

7782-44-7

Plasma Al2O3 using Custom

Deposition Temperature = 25C

0-0-0

7782-44-7

Film/Plasma Properties

Characteristic

Analysis

Diagnostic

Thickness

Ellipsometry

Unknown

Stress

Unknown

Unknown

Damage, Defects

Unknown

Unknown

Oxygen Transmission Rate (OTR)

Unknown

Unknown

Morphology, Roughness, Topography

AFM, Atomic Force Microscopy

Unknown

Morphology, Roughness, Topography

SEM, Scanning Electron Microscopy

Unknown

Substrates

Si(100)

Polypropylene

Keywords

Diffusion Barrier

Precursor Comparison

Notes

1107



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