Publication Information

Title: PEALD of SiO2 and Al2O3 Thin Films on Polypropylene: Investigations of the Film Growth at the Interface, Stress, and Gas Barrier Properties of Dyads

Type: Journal

Info: ACS Appl. Mater. Interfaces, 2018, 10 (8), pp 7422-7434

Date: 2018-01-17

DOI: http://dx.doi.org/10.1021/acsami.7b14916

Author Information

Name

Institution

Ruhr-University Bochum

Ruhr-University Bochum

Ruhr-University Bochum

Ruhr-University Bochum

University of Paderborn

RWTH Aachen University

RWTH Aachen University

RWTH Aachen University

University of Paderborn

Ruhr-University Bochum

RWTH Aachen University

University of Paderborn

Ruhr-University Bochum

Ruhr-University Bochum

Ruhr-University Bochum

Films

Plasma SiO2 using Custom

Deposition Temperature = 25C

27804-64-4

7782-44-7

Plasma Al2O3 using Custom

Deposition Temperature = 25C

75-24-1

7782-44-7

Plasma Al2O3 using Custom

Deposition Temperature = 25C

0-0-0

7782-44-7

Film/Plasma Properties

Characteristic

Analysis

Diagnostic

Thickness

Ellipsometry

-

Stress

Unknown

-

Damage, Defects

Unknown

-

Oxygen Transmission Rate (OTR)

Unknown

-

Morphology, Roughness, Topography

AFM, Atomic Force Microscopy

-

Morphology, Roughness, Topography

SEM, Scanning Electron Microscopy

-

Substrates

Si(100)

Polypropylene

Keywords

Diffusion Barrier

Precursor Comparison

Notes

1107



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