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Infrared single-photon sensitivity in atomic layer deposited superconducting nanowires
Effects of deposition temperature on the wear behavior and material properties of plasma enhanced atomic layer deposition (PEALD) titanium vanadium nitride thin films
Gallium nitride thin films by microwave plasma-assisted ALD
Ferroelectricity of HfxZr1-xO2 thin films fabricated by 300°C low temperature process with plasma-enhanced atomic layer deposition
Hydrogen-induced abstraction mechanism of surface methyl groups in atomic-layer-epitaxy of germanium
Flexible insulator of hollow SiO2 spheres and polyimide hybrid for flexible OLED
Type:
Journal
Info:
Phys. Chem. Chem. Phys., 2015,17, 2416-2420
Date:
2014-11-25
Author Information
| Name | Institution |
|---|---|
| Min-Kyu Kim | Sungkyunkwan University |
Films
Plasma SiO2
Hardware used: Synos PEALD
Film/Plasma Properties
Characteristic: Dielectric Constant, Permittivity
Analysis: -
Characteristic: Thermal Stability
Analysis: -
Characteristic: Leakage Current
Analysis: -
Substrates
Notes
| 251 |