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Low-temperature growth of gallium oxide thin films by plasma-enhanced atomic layer deposition
Low-temperature plasma-enhanced atomic layer deposition of 2-D MoS2: large area, thickness control and tuneable morphology
Microstructure and Interfaces of Ultra-Thin Epitaxial AlN Films Grown by Plasma-Enhanced Atomic Layer Deposition at Relatively Low Temperatures
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Flexible insulator of hollow SiO2 spheres and polyimide hybrid for flexible OLED
Type:
Journal
Info:
Phys. Chem. Chem. Phys., 2015,17, 2416-2420
Date:
2014-11-25
Author Information
| Name | Institution |
|---|---|
| Min-Kyu Kim | Sungkyunkwan University |
Films
Plasma SiO2
Hardware used: Synos PEALD
Film/Plasma Properties
Characteristic: Dielectric Constant, Permittivity
Analysis: -
Characteristic: Thermal Stability
Analysis: -
Characteristic: Leakage Current
Analysis: -
Substrates
Keywords
| Flexible Circuits |
| OLED |
Notes
| 251 |