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Growth of Gallium Nitride Films on Multilayer Graphene Template Using Plasma-Enhanced Atomic Layer Deposition
Ni80Fe20 nanotubes with optimized spintronic functionalities prepared by atomic layer deposition
On the Contact Optimization of ALD-Based MoS2 FETs: Correlation of Processing Conditions and Interface Chemistry with Device Electrical Performance
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Flexible insulator of hollow SiO2 spheres and polyimide hybrid for flexible OLED
Type:
Journal
Info:
Phys. Chem. Chem. Phys., 2015,17, 2416-2420
Date:
2014-11-25
Author Information
| Name | Institution |
|---|---|
| Min-Kyu Kim | Sungkyunkwan University |
Films
Plasma SiO2
Hardware used: Synos PEALD
Film/Plasma Properties
Characteristic: Dielectric Constant, Permittivity
Analysis: -
Characteristic: Thermal Stability
Analysis: -
Characteristic: Leakage Current
Analysis: -
Substrates
Keywords
| Flexible Circuits |
| OLED |
Notes
| 251 |