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Influence of Pre and Post-treatments on Plasma Enhanced ALD SiO2 and Al2O3 layers on GaN
Type:
Conference Proceedings
Info:
2015 Annual Meeting of the APS Four Corners Section
Date:
2015-10-16
Author Information
| Name | Institution |
|---|---|
| Mei Hao | Arizona State University |
Films
Film/Plasma Properties
Characteristic: Breakdown Voltage
Analysis: I-V, Current-Voltage Measurements
Characteristic: Leakage Current
Analysis: I-V, Current-Voltage Measurements
Characteristic: Unknown
Analysis: XPS, X-ray Photoelectron Spectroscopy
Substrates
| GaN |
Notes
| 490 |