Influence of Pre and Post-treatments on Plasma Enhanced ALD SiO2 and Al2O3 layers on GaN

Type:
Conference Proceedings
Info:
2015 Annual Meeting of the APS Four Corners Section
Date:
2015-10-16
DOI:
http://meetings.aps.org/Meeting/4CF15/Session/D6.2

Author Information

Name Institution
Mei HaoArizona State University

Films

Plasma Al2O3

Hardware used: Unknown
Deposition Temperature Range N/A

Plasma SiO2

Hardware used: Unknown
Deposition Temperature Range N/A

Film/Plasma Properties

Characteristic: Breakdown Voltage
Analysis: I-V, Current-Voltage Measurements
Diagnostic: -

Characteristic: Leakage Current
Analysis: I-V, Current-Voltage Measurements
Diagnostic: -

Characteristic: Unknown
Analysis: XPS, X-ray Photoelectron Spectroscopy
Diagnostic: -

Substrates

GaN

Notes

490