Chemical reactions during plasma-enhanced atomic layer deposition of SiO2 films employing aminosilane and O2/Ar plasma at 50°C

Type:
Journal
Info:
Japanese Journal of Applied Physics 53, 010305 (2014)
Date:
2013-11-24
DOI:
http://dx.doi.org/10.7567/JJAP.53.010305

Author Information

Name Institution
Yi LuNagoya University
Akiko KobayashiASM Microchemistry Oy
Hiroki KondoNagoya University
Kenji IshikawaNagoya University
Makoto SekineNagoya University
Masaru HoriNagoya University

Films

Plasma SiO2

Hardware used: Unknown
Deposition Temperature = 50C

Film/Plasma Properties

Characteristic: Deposition Kinetics, Reaction Mechanism
Analysis: ATR-FTIR
Diagnostic: -

Substrates

Notes

Precursor identified as aminosilane but that is more of a class of precursors than a specific molecule.
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