Introducing Plasma ALD, LLC's first in-house product.

An economical, compact inductively coupled plasma source.

Ideal for:
  • Plasma-Enhanced Atomic Layer Deposition
  • Thin Film Etch
  • Surface cleaning
  • Surface modification

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Effect of Reaction Mechanism on Precursor Exposure Time in Atomic Layer Deposition of Silicon Oxide and Silicon Nitride

Type:
Journal
Info:
ACS Appl. Mater. Interfaces, 2014, 6 (13), pp 10534-1054
Date:
2014-06-10
DOI:
http://dx.doi.org/10.1021/am5021167

Author Information

Name Institution
Ciaran A. MurrayTyndall National Institute, University College Cork

Films

Plasma SiO2

Hardware used: Unknown
Deposition Temperature Range N/A

Plasma SiNx

Hardware used: Unknown
Deposition Temperature Range N/A

Film/Plasma Properties

Characteristic: Chemical Composition, Impurities
Analysis: FTIR, Fourier Transform InfraRed spectroscopy
Diagnostic: -

Substrates

Notes

247