Improved film quality of plasma enhanced atomic layer deposition SiO2 using plasma treatment cycle

Type:
Journal
Info:
J. Vac. Sci. Technol. A 33(1), Jan/Feb 2015
Date:
2014-12-01
DOI:
http://dx.doi.org/10.1116/1.4904147

Author Information

Name Institution
Haiwon KimSungkyunkwan University

Films

Plasma SiO2

Hardware used: Eugene Technology Cardinal
BDEAS, SAM-24, Bis(diethylamino)silane, (Et2N)2SiH2
CAS#: 27804-64-4
Where to buy precursor
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature = 375C

Film/Plasma Properties

Substrates

Notes

230