Publication Information

Title: Effect of Plasma Power of Plasma Enhanced Atomic Layer Deposition Process for Gate Insulator Deposition in Top-Gate Thin-Film Transistors

Type: Conference Proceedings

Info: 2015 SID Symposium Digest of Technical Papers

Date: 2015-09-22

DOI: http://dx.doi.org/10.1002/sdtp.10531

Author Information

Name

Institution

Korea Advanced Institute of Science and Technology

Korea Advanced Institute of Science and Technology

Electronics and Telecommunication Research Institute, (ETRI)

Electronics and Telecommunication Research Institute, (ETRI)

Korea Advanced Institute of Science and Technology

Films

Plasma SiO2 using Unknown

Deposition Temperature Range N/A

Film/Plasma Properties

Characteristic

Analysis

Diagnostic

Substrates

Keywords

Notes

461



Shortcuts



© 2014-2018 plasma-ald.com