About Plasma ALD, LLC

The Plasma Enhanced Atomic Layer Deposition Publication Database is developed and maintained by Plasma ALD, LLC, a developer and supplier of inductively coupled plasma (ICP) sources for plasma-enhanced atomic layer deposition (PEALD), atomic layer etch (ALE), thin-film etching, surface cleaning, surface modification, and research plasma systems.

Our ICP sources are designed for integration with existing ALD and vacuum-processing equipment. Plasma ALD also provides plasma-source integration, process-development, and troubleshooting assistance based on decades of experience with low-pressure plasma processing and PEALD systems.

Researchers, universities, equipment manufacturers, and laboratories looking for an ICP plasma source or assistance adding plasma capability to a vacuum system can learn more on our Plasma Sources page.

Effect of Plasma Power of Plasma Enhanced Atomic Layer Deposition Process for Gate Insulator Deposition in Top-Gate Thin-Film Transistors

Type:
Conference Proceedings
Info:
2015 SID Symposium Digest of Technical Papers
Date:
2015-09-22
DOI:
http://dx.doi.org/10.1002/sdtp.10531

Author Information

Name Institution
Jong Bum KoKorea Advanced Institute of Science and Technology
Hye In YeomKorea Advanced Institute of Science and Technology
Chi Sun HwangElectronics and Telecommunication Research Institute, (ETRI)
Sung Haeng ChoElectronics and Telecommunication Research Institute, (ETRI)
Sang-Hee Ko ParkKorea Advanced Institute of Science and Technology

Films

Plasma SiO2

Hardware used: Unknown
Deposition Temperature Range N/A

Film/Plasma Properties

Substrates

Notes

461