Publication Information

Title: Plasma Enhanced Atomic Layer Deposition of SiO2 Using Space-Divided Plasma System

Type: Journal

Info: Science of Advanced Materials, Volume 8, Number 4 2016, pp. 872-877

Date: 2016-04-01

DOI: https://doi.org/10.1166/sam.2016.2547

Author Information

Name

Institution

Kwangwoon University

Kwangwoon University

Kwangwoon University

Kwangwoon University

Kwangwoon University

Films

Plasma SiO2 using Custom

Deposition Temperature Range = 50-400C

27804-64-4

7782-44-7

Plasma SiON using Custom

Deposition Temperature Range N/A

27804-64-4

7782-44-7

7727-37-9

Film/Plasma Properties

Characteristic

Analysis

Diagnostic

Wet Etch Resistance

Wet Etch

Custom

Conformality, Step Coverage

Unknown

-

Images

TEM, Transmission Electron Microscope

-

Interfacial Layer

TEM, Transmission Electron Microscope

-

Morphology, Roughness, Topography

Unknown

-

Substrates

Keywords

Notes

Used conference abstract for some additional info.

891



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