Plasma Enhanced Atomic Layer Deposition of SiO2 Using Space-Divided Plasma System

Type:
Journal
Info:
Science of Advanced Materials, Volume 8, Number 4 2016, pp. 872-877
Date:
2016-04-01
DOI:
https://doi.org/10.1166/sam.2016.2547

Author Information

Name Institution
Hyuckjip ChoiKwangwoon University
Han S. UhmKwangwoon University
Gi-Chung KwonKwangwoon University
Byungha ChoKwangwoon University
Jinhyuck YooKwangwoon University

Films

Plasma SiO2

Hardware used: Custom
BDEAS, SAM-24, Bis(diethylamino)silane, (Et2N)2SiH2
CAS#: 27804-64-4
Where to buy precursor
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature Range = 50-400C

Plasma SiON

Hardware used: Custom
BDEAS, SAM-24, Bis(diethylamino)silane, (Et2N)2SiH2
CAS#: 27804-64-4
Where to buy precursor
O2, Oxygen
CAS#: 7782-44-7
N2, Nitrogen
CAS#: 7727-37-9
Deposition Temperature Range N/A

Film/Plasma Properties

Characteristic: Wet Etch Resistance
Analysis: Wet Etch
Diagnostic: Custom

Characteristic: Conformality, Step Coverage
Analysis: -
Diagnostic: -

Characteristic: Images
Analysis: TEM, Transmission Electron Microscope
Diagnostic: -

Characteristic: Interfacial Layer
Analysis: TEM, Transmission Electron Microscope
Diagnostic: -

Characteristic: Morphology, Roughness, Topography
Analysis: -
Diagnostic: -

Substrates

Notes

Used conference abstract for some additional info.
891