Spectral analysis of the line-width and line-edge roughness transfer during self-aligned double patterning approach

Type:
Conference Proceedings
Info:
Proc. SPIE 9428, Advanced Etch Technology for Nanopatterning IV
Date:
2015-02-22
DOI:
http://dx.doi.org/10.1117/12.2085812

Author Information

Name Institution
E. DupuyCEA - Grenoble
E. PargonCEA - Grenoble
M. FouchierCEA - Grenoble
H. GrampeixCEA - Grenoble
J. PradellesCEA - Grenoble
Maxine DarnonCEA - Grenoble
P. Pimenta-BarrosCEA - Grenoble
S. BarnolaCEA - Grenoble
Olivier JoubertCEA - Grenoble

Films

Plasma SiO2

Hardware used: ASM EmerALD
BDEAS, SAM-24, Bis(diethylamino)silane, (Et2N)2SiH2
CAS#: 27804-64-4
Where to buy precursor
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature = 50C

Film/Plasma Properties

Characteristic: Thickness
Analysis: Ellipsometry
Diagnostic: -

Substrates

Notes

532