Experimental and numerical analysis of the effects of ion bombardment in silicon oxide (SiO2) plasma enhanced atomic layer deposition (PEALD) processes

Type:
Journal
Info:
Japanese Journal of Applied Physics 59, SJJA01 (2020)
Date:
2020-04-03
DOI:
http://dx.doi.org/10.35848/1347-4065/ab8681

Author Information

Name Institution
Hu LiTokyo Electron Technology Solutions, Ltd.
Tomoko ItoOsaka University
Kazuhiro KarahashiOsaka University
Munehito KagayaTokyo Electron Technology Solutions, Ltd.
Tsuyoshi MoriyaTokyo Electron Technology Solutions, Ltd.
Masaaki MatsukumaTokyo Electron Technology Solutions, Ltd.
Satoshi HamaguchiOsaka University

Films

Plasma SiO2

Hardware used: Unknown
Deposition Temperature Range N/A

Thermal SiO2

Hardware used: Unknown
Deposition Temperature Range N/A

Film/Plasma Properties

Characteristic: Compositional Depth Profiling
Analysis: SIMS, Secondary Ion Mass Spectrometry
Diagnostic: -

Characteristic: Sputter Rate
Analysis: Profilometry
Diagnostic: Dektak

Characteristic: Chemical Binding
Analysis: XPS, X-ray Photoelectron Spectroscopy
Diagnostic: -

Substrates

Notes

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