Boosting n-Type Doping Levels of Ge With Co-Doping by Integrating Plasma-Assisted Atomic Layer Deposition and Flash Annealing Process

Type:
Journal
Info:
IEEE ELECTRON DEVICE LETTERS, VOL. 40, NO. 9, PP. 1507--1510, 2019
Date:
2019-07-23
DOI:
http://dx.doi.org/10.1109/LED.2019.2931404

Author Information

Name Institution
Seunghun BaikDaegu Gyeongbuk Institute of Science & Technology
Hyeokjin KwonDaegu Gyeongbuk Institute of Science & Technology
Chuck PaengLam Research Corporation
He ZhangLam Research Corporation
Bodo KalkofenOtto-von-Guericke University
Jae Eun JangDaegu Gyeongbuk Institute of Science & Technology
Y. S. KimLam Research Corporation
Hyuk-Jun KwonDaegu Gyeongbuk Institute of Science & Technology

Films

Plasma POx

Hardware used: Unknown
Deposition Temperature Range N/A

Plasma Sb2O5

Hardware used: Unknown
Deposition Temperature Range N/A

Plasma SiO2

Hardware used: Unknown
Deposition Temperature Range N/A

Film/Plasma Properties

Characteristic: Compositional Depth Profiling
Analysis: XPS, X-ray Photoelectron Spectroscopy
Diagnostic: -

Characteristic: Conformality, Step Coverage
Analysis: TEM, Transmission Electron Microscope
Diagnostic: -

Characteristic: Chemical Composition, Impurities
Analysis: EDS, EDX, Energy Dispersive X-ray Spectroscopy
Diagnostic: -

Substrates

Notes

1475