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Boosting n-Type Doping Levels of Ge With Co-Doping by Integrating Plasma-Assisted Atomic Layer Deposition and Flash Annealing Process
Type:
Journal
Info:
IEEE ELECTRON DEVICE LETTERS, VOL. 40, NO. 9, PP. 1507--1510, 2019
Date:
2019-07-23
Author Information
| Name | Institution |
|---|---|
| Seunghun Baik | Daegu Gyeongbuk Institute of Science & Technology |
| Hyeokjin Kwon | Daegu Gyeongbuk Institute of Science & Technology |
| Chuck Paeng | Lam Research Corporation |
| He Zhang | Lam Research Corporation |
| Bodo Kalkofen | Otto-von-Guericke University |
| Jae Eun Jang | Daegu Gyeongbuk Institute of Science & Technology |
| Y. S. Kim | Lam Research Corporation |
| Hyuk-Jun Kwon | Daegu Gyeongbuk Institute of Science & Technology |
Films
Film/Plasma Properties
Characteristic: Compositional Depth Profiling
Analysis: XPS, X-ray Photoelectron Spectroscopy
Characteristic: Conformality, Step Coverage
Analysis: TEM, Transmission Electron Microscope
Characteristic: Chemical Composition, Impurities
Analysis: EDS, EDX, Energy Dispersive X-ray Spectroscopy
Substrates
Notes
| 1475 |