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Correlation between ferroelectricity and ferroelectric orthorhombic phase of HfxZr1-xO2 thin films using synchrotron x-ray analysis
Experimental and theoretical determination of the role of ions in atomic layer annealing
Crystalline AlN Interfacial Layer on GaN Using Plasma-Enhanced Atomic Layer Deposition
Effect of cycling on ultra-thin HfZrO4, ferroelectric synaptic weights
Plasma-Enhanced Atomic Layer Deposition of Nanostructured Gold Near Room Temperature
Theoretical Understanding of the Reaction Mechanism of SiO2 Atomic Layer Deposition
Type:
Journal
Info:
Chem. Mater. 2016, 28, 1247-1255
Date:
2016-02-16
Author Information
| Name | Institution |
|---|---|
| Guo-Yong Fang | Wenzhou University |
| Lina Xu | Wenzhou University |
| Jing Ma | Nanjing University |
| Aidong Li | Nanjing University |
Films
Film/Plasma Properties
Characteristic: Deposition Kinetics, Reaction Mechanism
Analysis: DFT, Density Functional Theory
Substrates
Keywords
| Modeling |
Notes
| PEALD discussion limited to recap of reference 22 which is here. |
| 768 |