Publication Information

Title:
Low-Temperature Plasma-Enhanced Atomic Layer Deposition of SiO2 Using Carbon Dioxide
Type:
Journal
Info:
Nanoscale Research Letters (2019) 14:55
Date:
2019-02-01

Author Information

Name Institution
Zhen ZhuAalto University
Perttu SippolaAalto University
Oili M. E. YlivaaraVTT Technical Research Centre
Chiara ModaneseAalto University
Marisa Di SabatinoNorwegian University of Science and Technology (NTNU)
Kenichiro MizohataUniversity of Helsinki
Saoussen MerdesBeneq Oy
Harri LipsanenAalto University
Hele SavinAalto University

Films

Plasma SiO2


Film/Plasma Properties

Characteristic: Thickness
Analysis: Ellipsometry

Characteristic: Chemical Composition, Impurities
Analysis: GDOES, Glow Discharge Optical Emission Spectroscopy

Characteristic: Chemical Composition, Impurities
Analysis: TOF-ERDA, Time-Of-Flight Elastic Recoil Detection Analysis

Characteristic: Chemical Composition, Impurities
Analysis: ATR-FTIR

Characteristic: Density
Analysis: XRR, X-Ray Reflectivity

Characteristic: Refractive Index
Analysis: Optical Transmission

Characteristic: Extinction Coefficient
Analysis: Optical Transmission

Characteristic: Stress
Analysis: Wafer Curvature

Substrates

Si(100)
Sapphire

Keywords

Notes

1252