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Low-Temperature Plasma-Enhanced Atomic Layer Deposition of SiO2 Using Carbon Dioxide
Type:
Journal
Info:
Nanoscale Research Letters (2019) 14:55
Date:
2019-02-01
Author Information
| Name | Institution |
|---|---|
| Zhen Zhu | Aalto University |
| Perttu Sippola | Aalto University |
| Oili M. E. Ylivaara | VTT Technical Research Centre |
| Chiara Modanese | Aalto University |
| Marisa Di Sabatino | Norwegian University of Science and Technology (NTNU) |
| Kenichiro Mizohata | University of Helsinki |
| Saoussen Merdes | Beneq Oy |
| Harri Lipsanen | Aalto University |
| Hele Savin | Aalto University |
Films
Plasma SiO2
Film/Plasma Properties
Characteristic: Thickness
Analysis: Ellipsometry
Characteristic: Chemical Composition, Impurities
Analysis: GDOES, Glow Discharge Optical Emission Spectroscopy
Characteristic: Chemical Composition, Impurities
Analysis: TOF-ERDA, Time-Of-Flight Elastic Recoil Detection Analysis
Characteristic: Chemical Composition, Impurities
Analysis: ATR-FTIR
Characteristic: Density
Analysis: XRR, X-Ray Reflectivity
Characteristic: Refractive Index
Analysis: Optical Transmission
Characteristic: Extinction Coefficient
Analysis: Optical Transmission
Characteristic: Stress
Analysis: Wafer Curvature
Substrates
| Si(100) |
| Sapphire |
Notes
| 1252 |