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Publication Information

Title: Crystal AlN deposited at low temperature by magnetic field enhanced plasma assisted atomic layer deposition

Type: Journal

Info: Journal of Vacuum Science & Technology A 31, 01A114 (2013)

Date: 2012-10-11

DOI: http://dx.doi.org/10.1116/1.4764112

Author Information

Name

Institution

Beijing Institute of Graphic Communication

Beijing Institute of Graphic Communication

Films

Plasma AlN using Custom

Deposition Temperature Range = 250-300C

75-24-1

7727-37-9

1333-74-0

Film/Plasma Properties

Characteristic

Analysis

Diagnostic

Bonding States

XPS, X-ray Photoelectron Spectroscopy

PHI Quantera SXM

Chemical Composition, Impurities

XPS, X-ray Photoelectron Spectroscopy

PHI Quantera SXM

Chemical Composition, Impurities

FTIR, Fourier Transform InfraRed spectroscopy

Unknown

Crystallinity, Crystal Structure, Grain Size, Atomic Structure

XRD, X-Ray Diffraction

Rigaku D/Max-2200PC

Thickness

Profilometry

Dektak

Morphology, Roughness, Topography

AFM, Atomic Force Microscopy

Veeco AFM

Refractive Index

Ellipsometry

Horiba Jobin Yvon

Extinction Coefficient

Ellipsometry

Horiba Jobin Yvon

Photoluminescence

PL, PhotoLuminescence

Custom

Substrates

Silicon

Keywords

Notes

Plasma left on during entire deposition process resulting in very large growth rates, as high as 1.04nm/cycle.

583


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