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Crystal AlN deposited at low temperature by magnetic field enhanced plasma assisted atomic layer deposition
Type:
Journal
Info:
Journal of Vacuum Science & Technology A 31, 01A114 (2013)
Date:
2012-10-11
Author Information
| Name | Institution |
|---|---|
| Wenwen Lei | Beijing Institute of Graphic Communication |
| Qiang Chen | Beijing Institute of Graphic Communication |
Films
Film/Plasma Properties
Characteristic: Bonding States
Analysis: XPS, X-ray Photoelectron Spectroscopy
Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy
Characteristic: Chemical Composition, Impurities
Analysis: FTIR, Fourier Transform InfraRed spectroscopy
Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: XRD, X-Ray Diffraction
Characteristic: Thickness
Analysis: Profilometry
Characteristic: Morphology, Roughness, Topography
Analysis: AFM, Atomic Force Microscopy
Characteristic: Refractive Index
Analysis: Ellipsometry
Characteristic: Extinction Coefficient
Analysis: Ellipsometry
Characteristic: Photoluminescence
Analysis: PL, PhotoLuminescence
Substrates
| Silicon |
Notes
| Plasma left on during entire deposition process resulting in very large growth rates, as high as 1.04nm/cycle. |
| 583 |