Publication Information

Title:
Crystal AlN deposited at low temperature by magnetic field enhanced plasma assisted atomic layer deposition
Type:
Journal
Info:
Journal of Vacuum Science & Technology A 31, 01A114 (2013)
Date:
2012-10-11

Author Information

Name Institution
Wenwen LeiBeijing Institute of Graphic Communication
Qiang ChenBeijing Institute of Graphic Communication

Films

Plasma AlN


Film/Plasma Properties

Characteristic: Bonding States
Analysis: XPS, X-ray Photoelectron Spectroscopy

Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy

Characteristic: Chemical Composition, Impurities
Analysis: FTIR, Fourier Transform InfraRed spectroscopy

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: XRD, X-Ray Diffraction

Characteristic: Thickness
Analysis: Profilometry

Characteristic: Morphology, Roughness, Topography
Analysis: AFM, Atomic Force Microscopy

Characteristic: Refractive Index
Analysis: Ellipsometry

Characteristic: Extinction Coefficient
Analysis: Ellipsometry

Characteristic: Photoluminescence
Analysis: PL, PhotoLuminescence

Substrates

Silicon

Keywords

Notes

Plasma left on during entire deposition process resulting in very large growth rates, as high as 1.04nm/cycle.
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