Publication Information

Title:
Growing aluminum nitride films by Plasma-Enhanced Atomic Layer Deposition at low temperatures
Type:
Journal
Info:
Journal of Physics: Conference Series 652 (2015) 012034
Date:
2015-09-06

Author Information

Name Institution
V. A. TaralaNorth-Caucasus Federal University
A. S. AltakhovNorth-Caucasus Federal University
V. Ya. MartensNorth-Caucasus Federal University
S. V. LisitsynNorth-Caucasus Federal University

Films

Plasma AlN


Film/Plasma Properties

Characteristic: Thickness
Analysis: Ellipsometry

Characteristic: Refractive Index
Analysis: Ellipsometry

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: XRD, X-Ray Diffraction

Characteristic: Transmittance
Analysis: FTIR, Fourier Transform InfraRed spectroscopy

Substrates

Si(111)

Keywords

Notes

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