Growing oriented AlN films on sapphire substrates by plasma-enhanced atomic layer deposition

Type:
Journal
Info:
Technical Physics Letters, 2017, Vol. 43, No. 1, pp. 74-77.
Date:
2016-07-12
DOI:
http://dx.doi.org/10.1134/S1063785017010138

Author Information

Name Institution
V. A. TaralaNorth-Caucasus Federal University
A. S. AltakhovNorth-Caucasus Federal University
M. AmbartsumovNorth-Caucasus Federal University
V. Ya. MartensNorth-Caucasus Federal University

Films

Plasma AlN

Hardware used: Beneq TFS-200
TMA, Trimethylaluminum, Trimethylalumane, AlMe3, Al(CH3)3
CAS#: 75-24-1
Where to buy precursor
N2, Nitrogen
CAS#: 7727-37-9
H2, Hydrogen
CAS#: 1333-74-0

Where to buy onsite generators

Deposition Temperature Range = 210-280C

Film/Plasma Properties

Characteristic: Thickness
Analysis: Ellipsometry
Diagnostic: SENTECH SE800

Characteristic: Refractive Index
Analysis: Ellipsometry
Diagnostic: SENTECH SE800

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: XRD, X-Ray Diffraction
Diagnostic: Thermo Fisher ARL X'TRA Powder Diffractometer

Substrates

Sapphire

Notes

1182