Diffusion barrier properties of transition metal thin films grown by plasma-enhanced atomic-layer deposition

Type:
Journal
Info:
Journal of Vacuum Science & Technology B 20, 1321-1326 (2002)
Date:
2002-04-22
DOI:
http://dx.doi.org/10.1116/1.1486233

Author Information

Name Institution
Hyungjun KimIBM
C. CabralIBM
C. LavoieIBM
S. M. RossnagelIBM

Films

Plasma Ta

Hardware used: Custom Remote Inductively Coupled Plasma
TaCl5, Tantalum Pentachloride
CAS#: 7721-01-9
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H2, Hydrogen
CAS#: 1333-74-0

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Deposition Temperature = 400C

Film/Plasma Properties

Characteristic: Diffusion Barrier Properties
Analysis: XRD, X-Ray Diffraction
Diagnostic: -

Characteristic: Diffusion Barrier Properties
Analysis: Optical Scattering
Diagnostic: Synchrotron

Characteristic: Resistivity, Sheet Resistance
Analysis: Four-point Probe
Diagnostic: -

Characteristic: Chemical Composition, Impurities
Analysis: RBS, Rutherford Backscattering Spectrometry
Diagnostic: -

Characteristic: Conformality, Step Coverage
Analysis: SEM, Scanning Electron Microscopy
Diagnostic: -

Substrates

Si(001)
Silicon

Keywords

Notes

1225