Publication Information

Title: PEALD of Copper using New Precursors for Next Generation of Interconnections

Type: Journal

Info: ALD 2010 Poster

Date: 2010-06-20

DOI: http://dx.doi.org/

Author Information

Name

Institution

State University of New York at Albany

State University of New York at Albany

Air Liquide

Air Liquide

Air Liquide

Air Liquide

Films

Plasma Cu using Unknown

Deposition Temperature Range N/A

0-0-0

1333-74-0

Plasma Cu using Unknown

Deposition Temperature Range N/A

0-0-0

1333-74-0

Film/Plasma Properties

Characteristic

Analysis

Diagnostic

Precursor Characterization

TGA, Thermo Gravimetric Analysis

-

Precursor Characterization

Vapor Pressure

-

Precursor Characterization

Melting Point

-

Thickness

SEM, Scanning Electron Microscopy

-

Chemical Composition, Impurities

RBS, Rutherford Backscattering Spectrometry

-

Thickness

RBS, Rutherford Backscattering Spectrometry

-

Resistivity, Sheet Resistance

Four-point Probe

-

Substrates

Ru

SiO2

TaN

Keywords

Interconnect

Seed Layer

Notes

Precursor data.

700



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