Publication Information

Title:
PEALD of Copper using New Precursors for Next Generation of Interconnections
Type:
Journal
Info:
ALD 2010 Poster
Date:
2010-06-20

Author Information

Name Institution
Jiajun MaoState University of New York at Albany
Eric T. EisenbraunState University of New York at Albany
Vincent OmarjeeAir Liquide
Andrey KorolevAir Liquide
Clement Lansalot-MatrasAir Liquide
Christian DussarratAir Liquide

Films

Plasma Cu

Hardware used: Unknown

CAS#: 0-0-0

CAS#: 1333-74-0

Plasma Cu

Hardware used: Unknown

CAS#: 0-0-0

CAS#: 1333-74-0

Film/Plasma Properties

Characteristic: Precursor Characterization
Analysis: TGA, Thermo Gravimetric Analysis

Characteristic: Precursor Characterization
Analysis: Vapor Pressure

Characteristic: Precursor Characterization
Analysis: Melting Point

Characteristic: Thickness
Analysis: SEM, Scanning Electron Microscopy

Characteristic: Chemical Composition, Impurities
Analysis: RBS, Rutherford Backscattering Spectrometry

Characteristic: Thickness
Analysis: RBS, Rutherford Backscattering Spectrometry

Characteristic: Resistivity, Sheet Resistance
Analysis: Four-point Probe

Substrates

Ru
SiO2
TaN

Keywords

Interconnect
Seed Layer

Notes

Precursor data.
700