Publication Information

Title:
In Situ Control of Oxygen Vacancies in TaOx Thin Films via Plasma-Enhanced Atomic Layer Deposition for Resistive Switching Memory Applications
Type:
Journal
Info:
ACS Appl. Mater. Interfaces, 2017, 9 (15), pp 13286-13292
Date:
2017-03-28

Author Information

Name Institution
Konstantin V. EgorovMoscow Institute of Physics and Technology
Dmitry S. KuzmichevMoscow Institute of Physics and Technology
Pavel S. ChizhovMoscow State University
Yuri Yu. LebedinskiiMoscow Institute of Physics and Technology
Cheol Seong HwangSeoul National University
Andrey M. MarkeevMoscow Institute of Physics and Technology

Films


Thermal Ta2O5


Film/Plasma Properties

Characteristic: Thickness
Analysis: Ellipsometry

Characteristic: Chemical Binding
Analysis: XPS, X-ray Photoelectron Spectroscopy

Characteristic: Chemical Composition, Impurities
Analysis: TOF-SIMS, Time of Flight Secondary Ion Mass Spectrometry

Characteristic: Electrical Properties
Analysis: I-V, Current-Voltage Measurements

Characteristic: Resistive Switching
Analysis: -

Substrates

TiN
Silicon

Keywords

Plasma vs Thermal Comparison
Resistive Switch
Resistance RAM
Resistance RAM

Notes

994