Growth mechanism and electrical properties of tungsten films deposited by plasma-enhanced atomic layer deposition with chloride and metal organic precursors

Type:
Journal
Info:
Applied Surface Science 568 (2021) 150939
Date:
2021-08-10

Author Information

Name Institution
Yujin LeeYonsei University
Seunggi SeoYonsei University
Taewook NamYonsei University
Hyunho LeeYonsei University
Hwi YoonYonsei University
Sangkyu SunYonsei University
Il-Kwon OhYonsei University
Sanghun LeeYonsei University
Bonggeun ShongHongik University
Jin Hyung SeoHansol Chemical
Jang Hyeon SeokHansol Chemical
Hyungjun KimYonsei University

Films


Plasma W


Film/Plasma Properties

Characteristic: Thickness
Analysis: SEM, Scanning Electron Microscopy

Characteristic: Conformality, Step Coverage
Analysis: SEM, Scanning Electron Microscopy

Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: XRD, X-Ray Diffraction

Characteristic: Density
Analysis: XRR, X-Ray Reflectivity

Characteristic: Resistivity, Sheet Resistance
Analysis: Four-point Probe

Substrates

SiO2

Notes

1707