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Growth mechanism and electrical properties of tungsten films deposited by plasma-enhanced atomic layer deposition with chloride and metal organic precursors

Type:
Journal
Info:
Applied Surface Science 568 (2021) 150939
Date:
2021-08-10
DOI:
https://doi.org/10.1016/j.apsusc.2021.150939

Author Information

Name Institution
Yujin LeeYonsei University
Seunggi SeoYonsei University
Taewook NamYonsei University
Hyunho LeeYonsei University
Hwi YoonYonsei University
Sangkyu SunYonsei University
Il-Kwon OhYonsei University
Sanghun LeeYonsei University
Bonggeun ShongHongik University
Jin Hyung SeoHansol Chemical
Jang Hyeon SeokHansol Chemical
Hyungjun KimYonsei University

Films

Plasma W

Hardware used: CN1 Atomic Premium
HEtCpW(CO)3, ethylcyclopentadienyl tungsten tricarbonyl
CAS#: 0-0-0
H2, Hydrogen
CAS#: 1333-74-0
Deposition Temperature = 400C

Plasma W

Hardware used: CN1 Atomic Premium
WCl6, Tungsten Hexachloride
CAS#: 13283-01-7
H2, Hydrogen
CAS#: 1333-74-0
Deposition Temperature = 250C

Film/Plasma Properties

Characteristic: Thickness
Analysis: SEM, Scanning Electron Microscopy
Diagnostic: JEOL JSM-7800F

Characteristic: Conformality, Step Coverage
Analysis: SEM, Scanning Electron Microscopy
Diagnostic: JEOL JSM-7800F

Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy
Diagnostic: Thermo Scientific K-Alpha

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: XRD, X-Ray Diffraction
Diagnostic: Rigaku ATX-G

Characteristic: Density
Analysis: XRR, X-Ray Reflectivity
Diagnostic: Rigaku Smartlab

Characteristic: Resistivity, Sheet Resistance
Analysis: Four-point Probe
Diagnostic: Keithley 4200-SCS

Substrates

SiO2

Notes

1707