Publication Information

Title: Plasma-assisted atomic layer epitaxial growth of aluminum nitride studied with real time grazing angle small angle x-ray scattering

Type: Journal

Info: Journal of Vacuum Science & Technology A 35, 031508 (2017)

Date: 2017-03-07

DOI: http://dx.doi.org/10.1116/1.4979007

Author Information

Name

Institution

U.S. Naval Research Laboratory

U.S. Naval Research Laboratory

U.S. Naval Research Laboratory

The College at Brockport SUNY

George Mason University

U.S. Naval Research Laboratory

U.S. Naval Research Laboratory

Boston University

U.S. Naval Research Laboratory

Boston University

U.S. Naval Research Laboratory

Films

Plasma AlN using Custom ICP

Deposition Temperature Range = 360-480C

75-24-1

7727-37-9

1333-74-0

Film/Plasma Properties

Characteristic

Analysis

Diagnostic

Morphology, Roughness, Topography

GISAXS, Grazing Incidence Small Angle X-ray Scattering

Custom

Thickness

XRR, X-Ray Reflectivity

Rigaku

Morphology, Roughness, Topography

AFM, Atomic Force Microscopy

Bruker Fastscan/ICON

Chemical Composition, Impurities

XPS, X-ray Photoelectron Spectroscopy

Thermo Scientific K-Alpha

Crystallinity, Crystal Structure, Grain Size, Atomic Structure

XRD, X-Ray Diffraction

Rigaku

Substrates

Sapphire

Keywords

Notes

Used beamlines at Brookhaven and Cornell.

1020



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