Introducing Plasma ALD, LLC's first in-house product.

An economical, compact inductively coupled plasma source.

Ideal for:
  • Plasma-Enhanced Atomic Layer Deposition
  • Thin Film Etch
  • Surface cleaning
  • Surface modification

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Polarization charge properties of low-temperature atomic layer deposition of AlN on GaN

Type:
Journal
Info:
2014 J. Phys. D: Appl. Phys. 47 345104
Date:
2014-06-24
DOI:
http://dx.doi.org/10.1088/0022-3727/47/34/345104

Author Information

Name Institution
Kevin VoonUniversity of Alberta
Kyle BotheUniversity of Alberta
Pouyan MotamediUniversity of Alberta
Kenneth C. CadienUniversity of Alberta
Douglas W. BarlageUniversity of Alberta

Films

Plasma AlN

Hardware used: Kurt J Lesker ALD-150L
TMA, Trimethylaluminum, Trimethylalumane, AlMe3, Al(CH3)3
CAS#: 75-24-1
Where to buy precursor
N2, Nitrogen
CAS#: 7727-37-9
H2, Hydrogen
CAS#: 1333-74-0

Where to buy onsite generators

Deposition Temperature = 250C

Film/Plasma Properties

Characteristic: Thickness
Analysis: Ellipsometry
Diagnostic: J.A. Woollam M-2000D

Substrates

Notes

561