Publication Information

Title:
Plasma-assisted atomic layer deposition of germanium antimony tellurium compounds
Type:
Journal
Info:
Journal of Vacuum Science & Technology A 36, 021510 (2018)
Date:
2018-01-09

Author Information

Name Institution
Mindaugas ŠilinskasOtto-von-Guericke University
Bodo KalkofenOtto-von-Guericke University
Ramasubramanian BalasubramanianOtto-von-Guericke University
Anatoliy BatmanovOtto-von-Guericke University
Edmund P. BurteOtto-von-Guericke University
Nicole HarmgarthOtto-von-Guericke University
Florian ZörnerOtto-von-Guericke University
Frank T. EdelmannOtto-von-Guericke University
Bernd GarkeOtto-von-Guericke University
Marco LiskerIHP - Leibniz-Institut für innovative Mikroelektronik

Films


Film/Plasma Properties

Characteristic: Thickness
Analysis: Ellipsometry

Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: XRD, X-Ray Diffraction

Characteristic: Chemical Composition, Impurities
Analysis: EDS, EDX, Energy Dispersive X-ray Spectroscopy

Substrates

Silicon
SiO2
Ir

Keywords

Notes

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