
Plasma-assisted atomic layer deposition of germanium antimony tellurium compounds
Type:
Journal
Info:
Journal of Vacuum Science & Technology A 36, 021510 (2018)
Date:
2018-01-09
Author Information
Name | Institution |
---|---|
Mindaugas Šilinskas | Otto-von-Guericke University |
Bodo Kalkofen | Otto-von-Guericke University |
Ramasubramanian Balasubramanian | Otto-von-Guericke University |
Anatoliy Batmanov | Otto-von-Guericke University |
Edmund P. Burte | Otto-von-Guericke University |
Nicole Harmgarth | Otto-von-Guericke University |
Florian Zörner | Otto-von-Guericke University |
Frank T. Edelmann | Otto-von-Guericke University |
Bernd Garke | Otto-von-Guericke University |
Marco Lisker | IHP - Leibniz-Institut für innovative Mikroelektronik |
Films
Plasma GeSbTe
Film/Plasma Properties
Characteristic: Thickness
Analysis: Ellipsometry
Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy
Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: XRD, X-Ray Diffraction
Characteristic: Chemical Composition, Impurities
Analysis: EDS, EDX, Energy Dispersive X-ray Spectroscopy
Substrates
Silicon |
SiO2 |
Ir |
Notes
1463 |