Publication Information

Title:
Work function tuning of plasma-enhanced atomic layer deposited WCxNy electrodes for metal/oxide/semiconductor devices
Type:
Journal
Info:
Applied Physics Letters 106, 082107 (2015)
Date:
2015-02-17

Author Information

Name Institution
Oren ZonensainTechnion-Israel Institute of Technology
Sivan FadidaTechnion-Israel Institute of Technology
Ilanit FisherLam Research Corporation
Juwen GaoLam Research Corporation
Kaushik ChattopadhyayLam Research Corporation
Greg HarmLam Research Corporation
Tom MountsierLam Research Corporation
Michal DanekLam Research Corporation
Moshe EizenbergTechnion-Israel Institute of Technology

Films

Plasma WC

Hardware used: Lam ALTUS

CAS#: Unknown


Plasma WCN

Hardware used: Lam ALTUS

CAS#: Unknown

CAS#: 7664-41-7


Thermal WCN

Hardware used: Lam ALTUS

CAS#: Unknown

CAS#: 7664-41-7

Film/Plasma Properties

Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy

Characteristic: Bonding States
Analysis: XPS, X-ray Photoelectron Spectroscopy

Characteristic: Flat Band Voltage
Analysis: C-V, Capacitance-Voltage Measurements

Characteristic: Doping Density
Analysis: C-V, Capacitance-Voltage Measurements

Characteristic: Work Function
Analysis: C-V, Capacitance-Voltage Measurements

Characteristic: Thickness
Analysis: Ellipsometry

Characteristic: Continuity
Analysis: TEM, Transmission Electron Microscope

Characteristic: Thickness
Analysis: TEM, Transmission Electron Microscope

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: TEM, Transmission Electron Microscope

Characteristic: Interfacial Layer
Analysis: TEM, Transmission Electron Microscope

Substrates

SiO2

Keywords

Gate Metal

Notes

Precursor details omitted. Plasma films used precursor containing W, C, N, H, and O while thermal films used a precursor with W, C, N, and H.
Oxygen containing precursors might be MDNOW (methylcyclopentadienyl-dicarbonyInitrosyl-tungsten) or EDNOW (ethylcyclopentadienyl-dicarbonyInitrosyl-tungsten) discussed in United States Patent Application 20150024592 assigned to Lam Research.
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