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Remote plasma atomic layer deposition of silicon nitride with bis(dimethylaminomethyl-silyl)trimethylsilyl amine and N2 plasma for gate spacer
Continuous polymer films deposited on top of porous substrates using plasma-enhanced atomic layer deposition and molecular layer deposition
Annealing effects on properties of Ga2O3 films deposited by plasma-enhanced atomic layer deposition
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Publication Information
Title:
Bipolar resistive switching properties of AlN films deposited by plasma-enhanced atomic layer deposition
Type:
Journal
Info:
Applied Surface Science Volume 315, 1 October 2014, Pages 110-115
Date:
2014-07-19
Author Information
| Name | Institution |
|---|---|
| Jian Zhang | Zhejiang University |
Films
Film/Plasma Properties
Substrates
Keywords
| Resistance RAM |
Notes
| 243 |
Popular Precursors
Top Authors
| Erwin (W.M.M.) Kessels |
| Hyeongtag Jeon |
| Hyungjun Kim |
| Mauritius C. M. (Richard) van de Sanden |
| Christophe Detavernier |