Bipolar resistive switching properties of AlN films deposited by plasma-enhanced atomic layer deposition

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Publication Information

Title: Bipolar resistive switching properties of AlN films deposited by plasma-enhanced atomic layer deposition

Type: Journal

Info: Applied Surface Science Volume 315, 1 October 2014, Pages 110-115

Date: 2014-07-19

DOI: http://dx.doi.org/10.1016/j.apsusc.2014.07.117

Author Information

Name

Institution

Jian Zhang

Zhejiang University

Films

Plasma AlN using Unknown

Deposition Temperature = 332C

TMA, Trimethyl Aluminum, Trimethylalane, Trimethylaluminium, Aluminium Trimethyl, Aluminum Trimethanide, Al(CH₃)₃, AlMe₃, Al₂(CH₃)₆, Al₂Me₆

75-24-1

Where to buy precursor

Nitrogen, N₂

7727-37-9

Hydrogen, H₂

1333-74-0

Film/Plasma Properties

Characteristic

Analysis

Diagnostic

Substrates

Keywords

Resistance RAM

Notes

243

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