Bipolar resistive switching properties of AlN films deposited by plasma-enhanced atomic layer deposition
Type:
Journal
Info:
Applied Surface Science Volume 315, 1 October 2014, Pages 110-115
Date:
2014-07-19
Author Information
| Name | Institution |
|---|---|
| Jian Zhang | Zhejiang University |
Films
Plasma AlN
Film/Plasma Properties
Substrates
Notes
| 243 |