Bipolar resistive switching properties of AlN films deposited by plasma-enhanced atomic layer deposition

Type:
Journal
Info:
Applied Surface Science Volume 315, 1 October 2014, Pages 110-115
Date:
2014-07-19
DOI:
http://dx.doi.org/10.1016/j.apsusc.2014.07.117

Author Information

Name Institution
Jian ZhangZhejiang University

Films

Plasma AlN

Hardware used: Kurt J Lesker ALD-150LX
TMA, trimethyl aluminum, AlMe3
CAS#: 75-24-1
Where to buy precursor
N2, Nitrogen
CAS#: 7727-37-9
H2, Hydrogen
CAS#: 1333-74-0

Where to buy onsite generators

Deposition Temperature = 332C

Film/Plasma Properties

Substrates

Keywords

Resistance RAM

Notes

243