Bipolar resistive switching properties of AlN films deposited by plasma-enhanced atomic layer deposition

Publication Information

Title: Bipolar resistive switching properties of AlN films deposited by plasma-enhanced atomic layer deposition

Type: Journal

Info: Applied Surface Science Volume 315, 1 October 2014, Pages 110-115

Date: 2014-07-19

DOI: http://dx.doi.org/10.1016/j.apsusc.2014.07.117

Name

Institution

Jian Zhang

Zhejiang University

75-24-1

7727-37-9

1333-74-0

Characteristic

Analysis

Diagnostic

Resistance RAM

243