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Growth of Gallium Nitride Films on Multilayer Graphene Template Using Plasma-Enhanced Atomic Layer Deposition Ni₈₀Fe₂₀ nanotubes with optimized spintronic functionalities prepared by atomic layer deposition On the Contact Optimization of ALD-Based MoS₂ FETs: Correlation of Processing Conditions and Interface Chemistry with Device Electrical Performance

Search 1609 plasma ALD publications by:

202 Films Compositions

272 Precursors and Plasma Gases

76 Deposition Hardwares

249 Film and Plasma Characteristics

Bipolar resistive switching properties of AlN films deposited by plasma-enhanced atomic layer deposition

Type:

Journal

Info:

Applied Surface Science Volume 315, 1 October 2014, Pages 110-115

Date:

2014-07-19

DOI:

http://dx.doi.org/10.1016/j.apsusc.2014.07.117

Author Information

Name	Institution
Jian Zhang	Zhejiang University

Films

Plasma AlN

Hardware used: Kurt J Lesker ALD-150LX

TMA, trimethyl aluminum, AlMe₃

CAS#: 75-24-1

Where to buy precursor

N₂, Nitrogen

CAS#: 7727-37-9

H₂, Hydrogen

CAS#: 1333-74-0

Where to buy onsite generators

Deposition Temperature = 332C

Film/Plasma Properties

Substrates

Keywords

Resistance RAM

Notes

243

The publication database currently has 1609 entries.

Search from:

202 Films Compositions

272 Precursors and Plasma Gases

76 Deposition Hardwares

249 Film and Plasma Characteristics

85 Theses