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Low-temperature growth of gallium oxide thin films by plasma-enhanced atomic layer deposition
Low-temperature plasma-enhanced atomic layer deposition of 2-D MoS2: large area, thickness control and tuneable morphology
Microstructure and Interfaces of Ultra-Thin Epitaxial AlN Films Grown by Plasma-Enhanced Atomic Layer Deposition at Relatively Low Temperatures
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Bipolar resistive switching properties of AlN films deposited by plasma-enhanced atomic layer deposition
Type:
Journal
Info:
Applied Surface Science Volume 315, 1 October 2014, Pages 110-115
Date:
2014-07-19
Author Information
| Name | Institution |
|---|---|
| Jian Zhang | Zhejiang University |
Films
Plasma AlN
Film/Plasma Properties
Substrates
Keywords
| Resistance RAM |
Notes
| 243 |