Title: AlN passivation by plasma-enhanced atomic layer deposition for GaN-based power switches and power amplifiers
Type: Journal
Info: 2013 Semicond. Sci. Technol. 28, 074015
Date: 2013-01-04
DOI: http://dx.doi.org/10.1088/0268-1242/28/7/074015
Name
Institution
Hong Kong University of Science and Technology
Chinese Academy of Sciences
75-24-1
75-24-1
Characteristic
Analysis
Diagnostic
Crystallinity, Crystal Structure, Grain Size, Atomic Structure
TEM, Transmission Electron Microscope
Unknown
Fixed Charge
C-V, Capacitance-Voltage Measurements
Agilent B1505A Semiconductor Device Analyzer
Capacitance
C-V, Capacitance-Voltage Measurements
Agilent B1505A Semiconductor Device Analyzer
Interface Trap Density
C-V, Capacitance-Voltage Measurements
Agilent B1505A Semiconductor Device Analyzer
Compositional Depth Profiling
XPS, X-ray Photoelectron Spectroscopy
Unknown
GaN
Passivation
581
I am sure there are papers I have not found. I am sure there is an occasional typo or omission in the database entries. If you know of publications I have missed or a database entry is wrong, send me an email at: marksowa@plasma-ald.com
© 2014-2018 plasma-ald.com