Publication Information

Title:
AlN passivation by plasma-enhanced atomic layer deposition for GaN-based power switches and power amplifiers
Type:
Journal
Info:
2013 Semicond. Sci. Technol. 28, 074015
Date:
2013-01-04

Author Information

Name Institution
Kevin J. ChenHong Kong University of Science and Technology
Sen HuangChinese Academy of Sciences

Films

Plasma AlN


Thermal Al2O3


Film/Plasma Properties

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: TEM, Transmission Electron Microscope

Characteristic: Fixed Charge
Analysis: C-V, Capacitance-Voltage Measurements

Characteristic: Capacitance
Analysis: C-V, Capacitance-Voltage Measurements

Characteristic: Interface Trap Density
Analysis: C-V, Capacitance-Voltage Measurements

Characteristic: Compositional Depth Profiling
Analysis: XPS, X-ray Photoelectron Spectroscopy

Substrates

GaN

Keywords

Passivation

Notes

581