Title: AlN passivation by plasma-enhanced atomic layer deposition for GaN-based power switches and power amplifiers
Type: Journal
Info: 2013 Semicond. Sci. Technol. 28, 074015
Date: 2013-01-04
DOI: http://dx.doi.org/10.1088/0268-1242/28/7/074015
Name
Institution
Hong Kong University of Science and Technology
Chinese Academy of Sciences
Characteristic
Analysis
Diagnostic
Crystallinity, Crystal Structure, Grain Size, Atomic Structure
TEM, Transmission Electron Microscope
-
Fixed Charge
C-V, Capacitance-Voltage Measurements
Agilent B1505A Semiconductor Device Analyzer
Capacitance
C-V, Capacitance-Voltage Measurements
Agilent B1505A Semiconductor Device Analyzer
Interface Trap Density
C-V, Capacitance-Voltage Measurements
Agilent B1505A Semiconductor Device Analyzer
Compositional Depth Profiling
XPS, X-ray Photoelectron Spectroscopy
-
GaN
Passivation
581
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