Title: AlN passivation by plasma-enhanced atomic layer deposition for GaN-based power switches and power amplifiers
Type: Journal
Info: 2013 Semicond. Sci. Technol. 28, 074015
Date: 2013-01-04
DOI: http://dx.doi.org/10.1088/0268-1242/28/7/074015
Name
Institution
Hong Kong University of Science and Technology
Chinese Academy of Sciences
Characteristic
Analysis
Diagnostic
Crystallinity, Crystal Structure, Grain Size, Atomic Structure
TEM, Transmission Electron Microscope
Unknown
Fixed Charge
C-V, Capacitance-Voltage Measurements
Agilent B1505A Semiconductor Device Analyzer
Capacitance
C-V, Capacitance-Voltage Measurements
Agilent B1505A Semiconductor Device Analyzer
Interface Trap Density
C-V, Capacitance-Voltage Measurements
Agilent B1505A Semiconductor Device Analyzer
Compositional Depth Profiling
XPS, X-ray Photoelectron Spectroscopy
Unknown
GaN
Passivation
581
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