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Ferroelectricity of HfxZr1-xO2 thin films fabricated by 300°C low temperature process with plasma-enhanced atomic layer deposition
Hydrogen-induced abstraction mechanism of surface methyl groups in atomic-layer-epitaxy of germanium
Hydrogen-plasma-assisted hybrid atomic layer deposition of Ir thin film as novel Cu diffusion barrier
Self-limiting diamond growth from alternating CFx and H fluxes
Sub-10-nm ferroelectric Gd-doped HfO2 layers
AlN passivation by plasma-enhanced atomic layer deposition for GaN-based power switches and power amplifiers
Type:
Journal
Info:
2013 Semicond. Sci. Technol. 28, 074015
Date:
2013-01-04
Author Information
| Name | Institution |
|---|---|
| Kevin J. Chen | Hong Kong University of Science and Technology |
| Sen Huang | Chinese Academy of Sciences |
Films
Film/Plasma Properties
Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: TEM, Transmission Electron Microscope
Characteristic: Fixed Charge
Analysis: C-V, Capacitance-Voltage Measurements
Characteristic: Capacitance
Analysis: C-V, Capacitance-Voltage Measurements
Characteristic: Interface Trap Density
Analysis: C-V, Capacitance-Voltage Measurements
Characteristic: Compositional Depth Profiling
Analysis: XPS, X-ray Photoelectron Spectroscopy
Substrates
| GaN |
Keywords
| Passivation |
Notes
| 581 |