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Optical in situ monitoring of plasma-enhanced atomic layer deposition process
The role of active species in the N2 and N2-H2 RF afterglows on selective surface nitriding of ALD-grown TiO2 films
The Applications of Ultra-Thin Nanofilm for Aerospace Advanced Manufacturing Technology
Texture of atomic layer deposited ruthenium
Comparative study of structural electrical dielectric and ferroelectric properties of HfO2 deposited by plasma-enhanced atomic layer deposition and radio frequency sputtering technique for the application in 1-T FeFET
AlN passivation by plasma-enhanced atomic layer deposition for GaN-based power switches and power amplifiers
Type:
Journal
Info:
2013 Semicond. Sci. Technol. 28, 074015
Date:
2013-01-04
Author Information
| Name | Institution |
|---|---|
| Kevin J. Chen | Hong Kong University of Science and Technology |
| Sen Huang | Chinese Academy of Sciences |
Films
Film/Plasma Properties
Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: TEM, Transmission Electron Microscope
Characteristic: Fixed Charge
Analysis: C-V, Capacitance-Voltage Measurements
Characteristic: Capacitance
Analysis: C-V, Capacitance-Voltage Measurements
Characteristic: Interface Trap Density
Analysis: C-V, Capacitance-Voltage Measurements
Characteristic: Compositional Depth Profiling
Analysis: XPS, X-ray Photoelectron Spectroscopy
Substrates
| GaN |
Keywords
| Passivation |
Notes
| 581 |