Publication Information

Title:
Atomic layer epitaxy of Si on Ge(100) using Si2Cl6 and atomic hydrogen
Type:
Journal
Info:
Applied Physics Letters 64, 884-886 (1994)
Date:
1993-12-09

Author Information

Name Institution
D. D. KoleskeIBM
S. M. GatesIBM

Films

Plasma Si


Film/Plasma Properties

Characteristic: Chemical Composition, Impurities
Analysis: RHEED, Reflection High-Energy Electron Diffraction

Substrates

Ge
SiGe

Keywords

Notes

1193