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An economical, compact inductively coupled plasma source.

Ideal for:
  • Plasma-Enhanced Atomic Layer Deposition
  • Thin Film Etch
  • Surface cleaning
  • Surface modification

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Atomic layer epitaxy of Si on Ge(100) using Si2Cl6 and atomic hydrogen

Type:
Journal
Info:
Applied Physics Letters 64, 884-886 (1994)
Date:
1993-12-09
DOI:
http://dx.doi.org/10.1063/1.110984

Author Information

Name Institution
D. D. KoleskeIBM
S. M. GatesIBM

Films

Plasma Si

Hardware used: Custom
Hexachlorodisilane, Si2Cl6
CAS#: 13465-77-5
Where to buy precursor
H2, Hydrogen
CAS#: 1333-74-0

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Deposition Temperature = 400C

Film/Plasma Properties

Characteristic: Chemical Composition, Impurities
Analysis: RHEED, Reflection High-Energy Electron Diffraction
Diagnostic: -

Substrates

Ge
SiGe

Notes

1193