Atomic layer epitaxy of Si on Ge(100) using Si2Cl6 and atomic hydrogen
Type:
Journal
Info:
Applied Physics Letters 64, 884-886 (1994)
Date:
1993-12-09
Author Information
| Name | Institution |
|---|---|
| D. D. Koleske | IBM |
| S. M. Gates | IBM |
Films
Film/Plasma Properties
Characteristic: Chemical Composition, Impurities
Analysis: RHEED, Reflection High-Energy Electron Diffraction
Substrates
| Ge |
| SiGe |
Notes
| 1193 |