AlN PEALD with TMA and forming gas: study of plasma reaction mechanisms

Type:
Journal
Info:
RSC Adv., 2021, 11, 12235-12248
Date:
2021-03-09
DOI:
http://dx.doi.org/10.1039/D0RA05134A

Author Information

Name Institution
Mengmeng MiaoUniversity of Alberta
Kenneth C. CadienUniversity of Alberta

Films

Plasma AlN

Hardware used: Kurt J Lesker ALD-150LX
TMA, Trimethylaluminum, Trimethylalumane, AlMe3, Al(CH3)3
CAS#: 75-24-1
Where to buy precursor
N2, Nitrogen
CAS#: 7727-37-9
H2, Hydrogen
CAS#: 1333-74-0

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Deposition Temperature Range = 50-250C

Film/Plasma Properties

Characteristic: Thickness
Analysis: Ellipsometry
Diagnostic: J.A. Woollam M-2000DI

Characteristic: Refractive Index
Analysis: Ellipsometry
Diagnostic: J.A. Woollam M-2000DI

Characteristic: Chemical Composition, Impurities
Analysis: FTIR, Fourier Transform InfraRed spectroscopy
Diagnostic: Bruker Vertex 70

Substrates

Si(100)

Notes

Nice discussion and analysis of in situ ellipsometry results.
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