Low temperature plasma enhanced atomic layer deposition of conducting zirconium nitride films using tetrakis (dimethylamido) zirconium and forming gas (5% H2 + 95% N2) plasma

Type:
Journal
Info:
Journal of Vacuum Science & Technology A 33, 031502 (2015)
Date:
2015-03-02
DOI:
http://dx.doi.org/10.1116/1.4915122

Author Information

Name Institution
Triratna MuneshwarUniversity of Alberta
Kenneth C. CadienUniversity of Alberta

Films

Plasma ZrN

Hardware used: Kurt J Lesker ALD-150LX
TDMAZr, (Me2N)4Zr, [(CH3)2N]4Zr, Tetrakis(DiMethylAmido) Zirconium, Zirconium Dimethylamide
CAS#: 19756-04-8
Where to buy precursor
N2, Nitrogen
CAS#: 7727-37-9
H2, Hydrogen
CAS#: 1333-74-0

Where to buy onsite generators

Deposition Temperature Range = 100-350C

Film/Plasma Properties

Characteristic: Thickness
Analysis: Ellipsometry
Diagnostic: J.A. Woollam M-2000D

Characteristic: Refractive Index
Analysis: Ellipsometry
Diagnostic: J.A. Woollam M-2000D

Characteristic: Thickness
Analysis: XRR, X-Ray Reflectivity
Diagnostic: Rigaku Ultima IV

Characteristic: Fermi Level Electronic Structure
Analysis: valence band XPS
Diagnostic: Kratos Analytical Axis Ultra DLD

Characteristic: Resistivity, Sheet Resistance
Analysis: van der Pauw sheet resistance
Diagnostic: Keithley 4200-SCS

Characteristic: TCR, Temperature Coefficient of Resistivity
Analysis: -
Diagnostic: -

Substrates

Si(111)
SiO2

Notes

Kurt J. Lesker ALD150LX PEALD of ZrN study.
340