Publication Information

Title:
Low temperature plasma enhanced atomic layer deposition of conducting zirconium nitride films using tetrakis (dimethylamido) zirconium and forming gas (5% H2 + 95% N2) plasma
Type:
Journal
Info:
Journal of Vacuum Science & Technology A 33, 031502 (2015)
Date:
2015-03-02

Author Information

Name Institution
Triratna MuneshwarUniversity of Alberta
Ken CadienUniversity of Alberta

Films


Film/Plasma Properties

Characteristic: Thickness
Analysis: Ellipsometry

Characteristic: Refractive Index
Analysis: Ellipsometry

Characteristic: Thickness
Analysis: XRR, X-Ray Reflectivity

Characteristic: Fermi Level Electronic Structure
Analysis: valence band XPS

Characteristic: Resistivity, Sheet Resistance
Analysis: van der Pauw sheet resistance

Characteristic: TCR, Temperature Coefficient of Resistivity
Analysis: -

Substrates

Si(111)
SiO2

Keywords

Interconnect
Diffusion Barrier

Notes

Kurt J. Lesker ALD150LX PEALD of ZrN study.
340