Publication Information

Title: Low-Temperature Atomic Layer Deposition of High Purity, Smooth, Low Resistivity Copper Films by Using Amidinate Precursor and Hydrogen Plasma

Type: Journal

Info: Chem. Mater. 2015, 27, 5988-5996

Date: 2015-08-14

DOI: http://dx.doi.org/10.1021/acs.chemmater.5b02137

Author Information

Name

Institution

Beijing Institute of Graphic Communication

Peking University

Beijing Institute of Graphic Communication

Beijing Institute of Graphic Communication

Beijing Institute of Graphic Communication

Beijing Institute of Graphic Communication

Peking University

Films

Plasma Cu using Custom

Deposition Temperature Range = 50-140C

0-0-0

1333-74-0

Film/Plasma Properties

Characteristic

Analysis

Diagnostic

Thickness

Profilometry

Dektak

Thickness

XRR, X-Ray Reflectivity

Bruker D8 Advance

Thickness

SEM, Scanning Electron Microscopy

Hitachi SU-8020

Morphology, Roughness, Topography

SEM, Scanning Electron Microscopy

Hitachi SU-8020

Conformality, Step Coverage

SEM, Scanning Electron Microscopy

Hitachi SU-8020

Chemical Composition, Impurities

XPS, X-ray Photoelectron Spectroscopy

Thermo Scientific K-Alpha

Morphology, Roughness, Topography

AFM, Atomic Force Microscopy

Veeco diInnova

Resistivity, Sheet Resistance

Four-point Probe

RTS-8 Four Point Probe

Deposition Kinetics, Reaction Mechanism

QCM, Quartz Crystal Microbalance

Inficon SQC-310 QCM

Deposition Kinetics, Reaction Mechanism

OES, Optical Emission Spectroscopy

Acton SpectroPro SP-2500

Microstructure

TEM, Transmission Electron Microscope

JEOL 2100

Microstructure

Electron Diffraction

JEOL 2100

Substrates

Silicon

Glass

Keywords

Notes

504



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