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Publication Information

Title: Atomic Layer Deposition of Copper Seed Layers from a (hfac)Cu(VTMOS) Precursor

Type: Journal

Info: Journal of the Korean Physical Society, Vol. 54, No. 3, pp. 1330-1333

Date: 2008-06-16

DOI: http://old.kps.or.kr/jkps/abstract_view.asp?articleuid

Author Information

Name

Institution

Hanyang University

Hanyang University

Hanyang University

Hanyang University

Hanyang University

Hynix Semiconductor

Hynix Semiconductor

Films

Plasma Cu using Unknown

Deposition Temperature Range = 180-350C

0-0-0

1333-74-0

Film/Plasma Properties

Characteristic

Analysis

Diagnostic

Morphology, Roughness, Topography

SEM, Scanning Electron Microscopy

Unknown

Images

SEM, Scanning Electron Microscopy

Unknown

Morphology, Roughness, Topography

AFM, Atomic Force Microscopy

Unknown

Resistivity, Sheet Resistance

Hall Measurements

Unknown

Mobility

Hall Measurements

Unknown

Chemical Composition, Impurities

XPS, X-ray Photoelectron Spectroscopy

Unknown

Crystallinity, Crystal Structure, Grain Size, Atomic Structure

XRD, X-Ray Diffraction

Unknown

Conformality, Step Coverage

TEM, Transmission Electron Microscope

Unknown

Images

TEM, Transmission Electron Microscope

Unknown

Substrates

TiN

TaN

Keywords

Interconnect

Notes

737



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