Publication Information

Title:
Atomic Layer Deposition of Copper Seed Layers from a (hfac)Cu(VTMOS) Precursor
Type:
Journal
Info:
Journal of the Korean Physical Society, Vol. 54, No. 3, pp. 1330-1333
Date:
2008-06-16

Author Information

Name Institution
Dae-Young MoonHanyang University
Woong-Sun KimHanyang University
Tae-Sub KimHanyang University
Byoung-Woo KangHanyang University
Jong-Wan ParkHanyang University
Seungjin YeomHynix Semiconductor
Jae Hong KimHynix Semiconductor

Films

Plasma Cu


Film/Plasma Properties

Characteristic: Morphology, Roughness, Topography
Analysis: SEM, Scanning Electron Microscopy

Characteristic: Images
Analysis: SEM, Scanning Electron Microscopy

Characteristic: Morphology, Roughness, Topography
Analysis: AFM, Atomic Force Microscopy

Characteristic: Resistivity, Sheet Resistance
Analysis: Hall Measurements

Characteristic: Mobility
Analysis: Hall Measurements

Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: XRD, X-Ray Diffraction

Characteristic: Conformality, Step Coverage
Analysis: TEM, Transmission Electron Microscope

Characteristic: Images
Analysis: TEM, Transmission Electron Microscope

Substrates

TiN
TaN

Keywords

Interconnect

Notes

737