Publication Information

Title: Atomic Layer Deposition of Copper Seed Layers from a (hfac)Cu(VTMOS) Precursor

Type: Journal

Info: Journal of the Korean Physical Society, Vol. 54, No. 3, pp. 1330-1333

Date: 2008-06-16

DOI: http://old.kps.or.kr/jkps/abstract_view.asp?articleuid

Author Information

Name

Institution

Hanyang University

Hanyang University

Hanyang University

Hanyang University

Hanyang University

Hynix Semiconductor

Hynix Semiconductor

Films

Plasma Cu using Unknown

Deposition Temperature Range = 180-350C

0-0-0

1333-74-0

Film/Plasma Properties

Characteristic

Analysis

Diagnostic

Morphology, Roughness, Topography

SEM, Scanning Electron Microscopy

-

Images

SEM, Scanning Electron Microscopy

-

Morphology, Roughness, Topography

AFM, Atomic Force Microscopy

-

Resistivity, Sheet Resistance

Hall Measurements

-

Mobility

Hall Measurements

-

Chemical Composition, Impurities

XPS, X-ray Photoelectron Spectroscopy

-

Crystallinity, Crystal Structure, Grain Size, Atomic Structure

XRD, X-Ray Diffraction

-

Conformality, Step Coverage

TEM, Transmission Electron Microscope

-

Images

TEM, Transmission Electron Microscope

-

Substrates

TiN

TaN

Keywords

Interconnect

Notes

737



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