Interface Properties of Nickel-silicide Films Deposited by Using Plasma-assisted Atomic Layer Deposition

Type:
Journal
Info:
Journal of the Korean Physical Society, Vol. 55, No. 3, pp. 1153 - 1157
Date:
2009-01-17
DOI:
http://old.kps.or.kr/jkps/abstract_view.asp?articleuid=08D3E8A5-9156-4352-AE55-876C96F97EA1&globalmenu=3&localmenu=10

Author Information

Name Institution
Kwang-Man LeeJeju National University
Chang Young KimJeju National University
Chi Kyu ChoiJeju National University
Sang-Won YunKyungpook National University
Jong-Bong HaKyungpook National University
Jung-Hee LeeKyungpook National University
Jeong Yong LeeKorea Advanced Institute of Science and Technology

Films

Plasma Ni

Hardware used: Unknown
H2, Hydrogen
CAS#: 1333-74-0

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Deposition Temperature = 220C

Film/Plasma Properties

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: XRD, X-Ray Diffraction
Diagnostic: -

Characteristic: Compositional Depth Profiling
Analysis: AES, Auger Electron Spectroscopy
Diagnostic: -

Characteristic: Microstructure
Analysis: TEM, Transmission Electron Microscope
Diagnostic: -

Characteristic: Resistivity, Sheet Resistance
Analysis: Four-point Probe
Diagnostic: -

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: Electron Diffraction
Diagnostic: -

Substrates

Si(100)

Notes

Unspecified "Bis-Ni precursor"
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