Publication Information

Title: Interface Properties of Nickel-silicide Films Deposited by Using Plasma-assisted Atomic Layer Deposition

Type: Journal

Info: Journal of the Korean Physical Society, Vol. 55, No. 3, pp. 1153 - 1157

Date: 2009-01-17

DOI: http://old.kps.or.kr/jkps/abstract_view.asp?articleuid=08D3E8A5-9156-4352-AE55-876C96F97EA1&globalmenu=3&localmenu=10

Author Information

Name

Institution

Jeju National University

Jeju National University

Jeju National University

Kyungpook National University

Kyungpook National University

Kyungpook National University

Korea Advanced Institute of Science and Technology

Films

Plasma Ni using Unknown

Deposition Temperature = 220C

1333-74-0

Film/Plasma Properties

Characteristic

Analysis

Diagnostic

Crystallinity, Crystal Structure, Grain Size, Atomic Structure

XRD, X-Ray Diffraction

-

Compositional Depth Profiling

AES, Auger Electron Spectroscopy

-

Microstructure

TEM, Transmission Electron Microscope

-

Resistivity, Sheet Resistance

Four-point Probe

-

Crystallinity, Crystal Structure, Grain Size, Atomic Structure

Electron Diffraction

-

Substrates

Si(100)

Keywords

Silicide

Notes

Unspecified "Bis-Ni precursor"

745



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