Plasma-Assisted Atomic Layer Deposition of Palladium
Type:
Journal
Info:
Chem. Vap. Deposition 2005, 11, No. 1
Date:
2004-06-01
Author Information
| Name | Institution |
|---|---|
| Gregory A. Ten Eyck | Rensselaer Polytechnic Institute (RPI) |
| Jay J. Senkevich | Rensselaer Polytechnic Institute (RPI) |
| Fu Tang | Rensselaer Polytechnic Institute (RPI) |
| Deli Liu | Rensselaer Polytechnic Institute (RPI) |
| Samuk Pimanpang | Rensselaer Polytechnic Institute (RPI) |
| Tansel Karaback | Rensselaer Polytechnic Institute (RPI) |
| Gwo-Ching Wang | Rensselaer Polytechnic Institute (RPI) |
| Toh-Ming Lu | Rensselaer Polytechnic Institute (RPI) |
| Christopher Jezewski | State University of New York at Albany |
| W. A. Lanford | State University of New York at Albany |
Films
Plasma Pd
Film/Plasma Properties
Characteristic: Density
Analysis: RBS, Rutherford Backscattering Spectrometry
Characteristic: Thickness
Analysis: RBS, Rutherford Backscattering Spectrometry
Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy
Characteristic: Morphology, Roughness, Topography
Analysis: AFM, Atomic Force Microscopy
Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: RHEED, Reflection High-Energy Electron Diffraction
Substrates
| Silicon |
| W |
| Ir |
Notes
| 1179 |