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Atomic hydrogen-assisted ALE of germanium

Type:
Journal
Info:
Applied Surface Science 90 (1995) 349-356
Date:
1995-05-30
DOI:
https://doi.org/10.1016/0169-4332(95)00152-2

Author Information

Name Institution
Satoshi SugaharaTokyo Institute of Technology
Masaru KadoshimaTokyo Institute of Technology
Takuya KitamuraTokyo Institute of Technology
Shigeru ImaiTokyo Institute of Technology
Masakiyo MatsumuraTokyo Institute of Technology

Films

Plasma Ge

Hardware used: Custom Hot-wire
DMG, Dimethylgermane, Me2GeH2
CAS#: 1449-64-5
H2, Hydrogen
CAS#: 1333-74-0
Deposition Temperature Range = 390-530C

Film/Plasma Properties

Characteristic: Thickness
Analysis: Profilometry
Diagnostic: -

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: RHEED, Reflection High-Energy Electron Diffraction
Diagnostic: -

Characteristic: Morphology, Roughness, Topography
Analysis: SEM, Scanning Electron Microscopy
Diagnostic: -

Characteristic: Morphology, Roughness, Topography
Analysis: AFM, Atomic Force Microscopy
Diagnostic: -

Characteristic: Chemical Composition, Impurities
Analysis: AES, Auger Electron Spectroscopy
Diagnostic: -

Substrates

Ge

Notes

1577