Characteristics of Ti-Capped Co Films Deposited by a Remote Plasma ALD Method Using Cyclopentadienylcobalt Dicarbonyl

Type:
Journal
Info:
Journal of The Electrochemical Society, 154 (10) H899-H903 (2007)
Date:
2007-06-17
DOI:
http://dx.doi.org/10.1149/1.2769327

Author Information

Name Institution
Keunwoo LeeHanyang University
Keunjun KimHanyang University
Taeyong ParkHanyang University
Hyeongtag JeonHanyang University
Youngjin LeeHynix Semiconductor
Jeongtae KimHynix Semiconductor
Seungjin YeomHynix Semiconductor

Films

Plasma Co

Hardware used: Custom
Dicarbonylcyclopentadienylcobalt, CpCo(CO)2
CAS#: 12078-25-0
Where to buy precursor
H2, Hydrogen
CAS#: 1333-74-0

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Deposition Temperature = 150C

Film/Plasma Properties

Characteristic: Chemical Composition, Impurities
Analysis: AES, Auger Electron Spectroscopy
Diagnostic: -

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: XRD, X-Ray Diffraction
Diagnostic: -

Characteristic: Thickness
Analysis: TEM, Transmission Electron Microscope
Diagnostic: -

Characteristic: Microstructure
Analysis: TEM, Transmission Electron Microscope
Diagnostic: -

Characteristic: Images
Analysis: TEM, Transmission Electron Microscope
Diagnostic: -

Substrates

Si(100)

Notes

1011