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Hydrogen-induced abstraction mechanism of surface methyl groups in atomic-layer-epitaxy of germanium
Type:
Journal
Info:
Applied Surface Science 130-132 (1998) 327-333
Date:
1997-12-22
Author Information
| Name | Institution |
|---|---|
| Satoshi Sugahara | Tokyo Institute of Technology |
| Kimihiko Hosaka | Tokyo Institute of Technology |
| Masakiyo Matsumura | Tokyo Institute of Technology |
Films
Plasma Ge
Thermal Ge
Film/Plasma Properties
Characteristic: Thickness
Analysis: -
Substrates
| Ge(100) |
| Ge(111) |
Notes
| 1691 |