Hydrogen-induced abstraction mechanism of surface methyl groups in atomic-layer-epitaxy of germanium

Type:
Journal
Info:
Applied Surface Science 130-132 (1998) 327-333
Date:
1997-12-22
DOI:
https://doi.org/10.1016/S0169-4332(98)00079-8

Author Information

Name Institution
Satoshi SugaharaTokyo Institute of Technology
Kimihiko HosakaTokyo Institute of Technology
Masakiyo MatsumuraTokyo Institute of Technology

Films

Plasma Ge

Hardware used: Custom Hot-wire
DMG, Dimethylgermane, Me2GeH2
CAS#: 1449-64-5
H2, Hydrogen
CAS#: 1333-74-0

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Deposition Temperature Range = 400-560C

Thermal Ge

Hardware used: Custom
DMG, Dimethylgermane, Me2GeH2
CAS#: 1449-64-5
Deposition Temperature Range = 450-530C

Film/Plasma Properties

Characteristic: Thickness
Analysis: -
Diagnostic: -

Substrates

Ge(100)
Ge(111)

Notes

1691