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Hydrogen radical enhanced atomic layer deposition of TaOx: saturation studies and methods for oxygen deficiency control

Type:
Journal
Info:
J. Mater. Chem. C, 2018, 6, 9667-9674
Date:
2018-08-14
DOI:
http://dx.doi.org/10.1039/C8TC00679B

Author Information

Name Institution
Konstantin V. EgorovMoscow Institute of Physics and Technology
Dmitry S. KuzmichevMoscow Institute of Physics and Technology
Andrey A. SigarevMoscow Institute of Physics and Technology
Denis I. MyakotaMoscow Institute of Physics and Technology
Sergey S. ZarubinMoscow Institute of Physics and Technology
Pavel S. ChizovMoscow State University
Timofey V. PerevalovRzhanov Institute of Semiconductor Physics SB RAS
Vladimir A. GritsenkoRzhanov Institute of Semiconductor Physics SB RAS
Cheol Seong HwangSeoul National University
Andrey M. MarkeevMoscow Institute of Physics and Technology

Films

Plasma Ta2O5

Hardware used: Picosun R200
Ta(OC2H5)5, Ta(OEt)5, Tantalum(V) ethoxide
CAS#: 6074-84-6
H2, Hydrogen
CAS#: 1333-74-0
Deposition Temperature = 300C

Film/Plasma Properties

Characteristic: Thickness
Analysis: Ellipsometry
Diagnostic: SENTECH SE500adv

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: XRD, X-Ray Diffraction
Diagnostic: Thermo Fisher ARL X'TRA

Characteristic: Unknown
Analysis: XRR, X-Ray Reflectivity
Diagnostic: Thermo Fisher ARL X'TRA

Characteristic: Images
Analysis: TEM, Transmission Electron Microscope
Diagnostic: JEOL 2100

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: Electron Diffraction
Diagnostic: JEOL 2100

Characteristic: Bonding States
Analysis: XPS, X-ray Photoelectron Spectroscopy
Diagnostic: Thermo VG-Scientific theta probe

Characteristic: Band Gap
Analysis: REELS, Reflection Electron Energy Loss Spectroscopy
Diagnostic: -

Characteristic: Chemical Composition, Impurities
Analysis: FTIR, Fourier Transform InfraRed spectroscopy
Diagnostic: Perkin Elmer Spectrum 100

Substrates

Si with native oxide

Notes

1286