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Hydrogen radical enhanced atomic layer deposition of TaOx: saturation studies and methods for oxygen deficiency control
Type:
Journal
Info:
J. Mater. Chem. C, 2018, 6, 9667-9674
Date:
2018-08-14
Author Information
| Name | Institution |
|---|---|
| Konstantin V. Egorov | Moscow Institute of Physics and Technology |
| Dmitry S. Kuzmichev | Moscow Institute of Physics and Technology |
| Andrey A. Sigarev | Moscow Institute of Physics and Technology |
| Denis I. Myakota | Moscow Institute of Physics and Technology |
| Sergey S. Zarubin | Moscow Institute of Physics and Technology |
| Pavel S. Chizov | Moscow State University |
| Timofey V. Perevalov | Rzhanov Institute of Semiconductor Physics SB RAS |
| Vladimir A. Gritsenko | Rzhanov Institute of Semiconductor Physics SB RAS |
| Cheol Seong Hwang | Seoul National University |
| Andrey M. Markeev | Moscow Institute of Physics and Technology |
Films
Plasma Ta2O5
Film/Plasma Properties
Characteristic: Thickness
Analysis: Ellipsometry
Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: XRD, X-Ray Diffraction
Characteristic: Unknown
Analysis: XRR, X-Ray Reflectivity
Characteristic: Images
Analysis: TEM, Transmission Electron Microscope
Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: Electron Diffraction
Characteristic: Bonding States
Analysis: XPS, X-ray Photoelectron Spectroscopy
Characteristic: Band Gap
Analysis: REELS, Reflection Electron Energy Loss Spectroscopy
Characteristic: Chemical Composition, Impurities
Analysis: FTIR, Fourier Transform InfraRed spectroscopy
Substrates
| Si with native oxide |
Notes
| 1286 |