Publication Information

Title:
Hydrogen radical enhanced atomic layer deposition of TaOx: saturation studies and methods for oxygen deficiency control
Type:
Journal
Info:
J. Mater. Chem. C, 2018, 6, 9667-9674
Date:
2018-08-14

Author Information

Name Institution
Konstantin V. EgorovMoscow Institute of Physics and Technology
Dmitry S. KuzmichevMoscow Institute of Physics and Technology
Andrey A. SigarevMoscow Institute of Physics and Technology
Denis I. MyakotaMoscow Institute of Physics and Technology
Sergey S. ZarubinMoscow Institute of Physics and Technology
Pavel S. ChizovMoscow State University
Timofey V. PerevalovRzhanov Institute of Semiconductor Physics SB RAS
Vladimir A. GritsenkoRzhanov Institute of Semiconductor Physics SB RAS
Cheol Seong HwangSeoul National University
Andrey M. MarkeevMoscow Institute of Physics and Technology

Films


Film/Plasma Properties

Characteristic: Thickness
Analysis: Ellipsometry

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: XRD, X-Ray Diffraction

Characteristic: Unknown
Analysis: XRR, X-Ray Reflectivity

Characteristic: Images
Analysis: TEM, Transmission Electron Microscope

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: Electron Diffraction

Characteristic: Bonding States
Analysis: XPS, X-ray Photoelectron Spectroscopy

Characteristic: Band Gap
Analysis: REELS, Reflection Electron Energy Loss Spectroscopy

Characteristic: Chemical Composition, Impurities
Analysis: FTIR, Fourier Transform InfraRed spectroscopy

Substrates

Si with native oxide

Keywords

Notes

1286