About Plasma ALD, LLC

The Plasma Enhanced Atomic Layer Deposition Publication Database is developed and maintained by Plasma ALD, LLC, a developer and supplier of inductively coupled plasma (ICP) sources for plasma-enhanced atomic layer deposition (PEALD), atomic layer etch (ALE), thin-film etching, surface cleaning, surface modification, and research plasma systems.

Our ICP sources are designed for integration with existing ALD and vacuum-processing equipment. Plasma ALD also provides plasma-source integration, process-development, and troubleshooting assistance based on decades of experience with low-pressure plasma processing and PEALD systems.

Researchers, universities, equipment manufacturers, and laboratories looking for an ICP plasma source or assistance adding plasma capability to a vacuum system can learn more on our Plasma Sources page.

Remote Plasma and Thermal ALD of Platinum and Platinum Oxide Films

Type:
Presentation
Info:
ALD 2009
Date:
2008-11-03
DOI:
No DOI

Author Information

Name Institution
Harm C. M. KnoopsEindhoven University of Technology
Adriaan J. M. MackusEindhoven University of Technology
Merijn E. DondersEindhoven University of Technology
Mauritius C. M. (Richard) van de SandenEindhoven University of Technology
Peter H. L. NottenEindhoven University of Technology
Erwin (W.M.M.) KesselsEindhoven University of Technology

Films

Plasma Pt

Hardware used: Custom
(Trimethyl)methylcyclopentadienylplatinum, MeCpMe3Pt
CAS#: 94442-22-5
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature Range N/A

Thermal Pt

Hardware used: Custom
(Trimethyl)methylcyclopentadienylplatinum, MeCpMe3Pt
CAS#: 94442-22-5
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature Range N/A

Plasma Pt

Hardware used: Custom
(Trimethyl)methylcyclopentadienylplatinum, MeCpMe3Pt
CAS#: 94442-22-5
O2, Oxygen
CAS#: 7782-44-7
H2, Hydrogen
CAS#: 1333-74-0
Deposition Temperature Range N/A

Plasma PtO2

Hardware used: Custom
(Trimethyl)methylcyclopentadienylplatinum, MeCpMe3Pt
CAS#: 94442-22-5
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature Range N/A

Film/Plasma Properties

Characteristic: Thickness
Analysis: Ellipsometry
Diagnostic: -

Characteristic: Thickness
Analysis: XRR, X-Ray Reflectivity
Diagnostic: -

Characteristic: Morphology, Roughness, Topography
Analysis: AFM, Atomic Force Microscopy
Diagnostic: -

Characteristic: Density
Analysis: XRR, X-Ray Reflectivity
Diagnostic: -

Characteristic: Density
Analysis: RBS, Rutherford Backscattering Spectrometry
Diagnostic: -

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: XRD, X-Ray Diffraction
Diagnostic: -

Characteristic: Resistivity, Sheet Resistance
Analysis: Four-point Probe
Diagnostic: -

Substrates

Si(100)
SiO2

Notes

Pt and PtO2 process the same except PtO2 has longer O2 plasma step.
Same content as paper in database with similar name.
Showed 16:1 conformal Pt deposition.
Database entry based entirely on presentation pdf. Recorded talk was not reviewed.
68