PEALD-Grown Crystalline AlN Films on Si(100) with Sharp Interface and Good Uniformity

Type:
Journal
Info:
Nanoscale Research Letters (2017) 12:279
Date:
2017-04-05
DOI:
http://dx.doi.org/10.1186/s11671-017-2049-1

Author Information

Name Institution
Sanjie LiuUniversity of Science and Technology
Mingzeng PengUniversity of Science and Technology
Caixia HouUniversity of Science and Technology
Yingfeng HeUniversity of Science and Technology
Meiling LiUniversity of Science and Technology
Xinhe ZhengUniversity of Science and Technology

Films

Plasma AlN

Hardware used: Angstrom-dep III PEALD
TMA, Trimethylaluminum, Trimethylalumane, AlMe3, Al(CH3)3
CAS#: 75-24-1
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N2, Nitrogen
CAS#: 7727-37-9
H2, Hydrogen
CAS#: 1333-74-0

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Deposition Temperature Range = 100-350C

Film/Plasma Properties

Characteristic: Thickness
Analysis: Ellipsometry
Diagnostic: -

Characteristic: Refractive Index
Analysis: Ellipsometry
Diagnostic: -

Characteristic: Extinction Coefficient
Analysis: Ellipsometry
Diagnostic: -

Characteristic: Interfacial Layer
Analysis: XRR, X-Ray Reflectivity
Diagnostic: PANalytical Xpert PRO MPD X-ray Diffractometer

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: GIXRD, Grazing Incidence X-Ray Diffraction
Diagnostic: PANalytical Xpert PRO MPD X-ray Diffractometer

Characteristic: Thickness
Analysis: TEM, Transmission Electron Microscope
Diagnostic: -

Characteristic: Uniformity
Analysis: TEM, Transmission Electron Microscope
Diagnostic: -

Characteristic: Interfacial Layer
Analysis: TEM, Transmission Electron Microscope
Diagnostic: -

Substrates

Si(100)

Notes

1003