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PEALD-Grown Crystalline AlN Films on Si(100) with Sharp Interface and Good Uniformity
Type:
Journal
Info:
Nanoscale Research Letters (2017) 12:279
Date:
2017-04-05
Author Information
| Name | Institution |
|---|---|
| Sanjie Liu | University of Science and Technology |
| Mingzeng Peng | University of Science and Technology |
| Caixia Hou | University of Science and Technology |
| Yingfeng He | University of Science and Technology |
| Meiling Li | University of Science and Technology |
| Xinhe Zheng | University of Science and Technology |
Films
Plasma AlN
Film/Plasma Properties
Characteristic: Thickness
Analysis: Ellipsometry
Characteristic: Refractive Index
Analysis: Ellipsometry
Characteristic: Extinction Coefficient
Analysis: Ellipsometry
Characteristic: Interfacial Layer
Analysis: XRR, X-Ray Reflectivity
Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: GIXRD, Grazing Incidence X-Ray Diffraction
Characteristic: Thickness
Analysis: TEM, Transmission Electron Microscope
Characteristic: Uniformity
Analysis: TEM, Transmission Electron Microscope
Characteristic: Interfacial Layer
Analysis: TEM, Transmission Electron Microscope
Substrates
| Si(100) |
Notes
| 1003 |