Publication Information

Title: Influence of plasma chemistry on impurity incorporation in AlN prepared by plasma enhanced atomic layer deposition

Type: Journal

Info: 2013 J. Phys. D: Appl. Phys. 46 505502

Date: 2013-10-21

DOI: http://dx.doi.org/10.1088/0022-3727/46/50/505502

Author Information

Name

Institution

Aalto University

Tampere University of Technology

University of Jyväskylä

Aalto University

Aalto University

Films

Plasma AlN using Beneq TFS-500

Deposition Temperature = 200C

75-24-1

7664-41-7

Plasma AlN using Beneq TFS-500

Deposition Temperature = 200C

75-24-1

7727-37-9

1333-74-0

Film/Plasma Properties

Characteristic

Analysis

Diagnostic

Chemical Composition, Impurities

TOF-ERDA, Time-Of-Flight Elastic Recoil Detection Analysis

Unknown

Chemical Composition, Impurities

FTIR, Fourier Transform InfraRed spectroscopy

Perkin-Elmer Spectrum One

Density

XRR, X-Ray Reflectivity

PANalytical Xpert PRO MRD X-ray Diffractometer

Thickness

XRR, X-Ray Reflectivity

PANalytical Xpert PRO MRD X-ray Diffractometer

Crystallinity, Crystal Structure, Grain Size, Atomic Structure

SERS, Surface Enhanced Raman Scattering

Unknown

Crystallinity, Crystal Structure, Grain Size, Atomic Structure

XRD, X-Ray Diffraction

PANalytical Xpert PRO MRD X-ray Diffractometer

Thickness

Ellipsometry

Philips Plasmos SD 2300

Refractive Index

Ellipsometry

Philips Plasmos SD 2300

Substrates

Silicon

Keywords

Notes

585



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