Influence of plasma chemistry on impurity incorporation in AlN prepared by plasma enhanced atomic layer deposition

Type:
Journal
Info:
2013 J. Phys. D: Appl. Phys. 46 505502
Date:
2013-10-21
DOI:
http://dx.doi.org/10.1088/0022-3727/46/50/505502

Author Information

Name Institution
Alexander Pyymaki PerrosAalto University
Hanna HakolaTampere University of Technology
Timo SajavaaraUniversity of Jyväskylä
Teppo HuhtioAalto University
Harri LipsanenAalto University

Films

Plasma AlN

Hardware used: Beneq TFS-500
TMA, Trimethylaluminum, Trimethylalumane, AlMe3, Al(CH3)3
CAS#: 75-24-1
Where to buy precursor
NH3, Ammonia
CAS#: 7664-41-7
Deposition Temperature = 200C

Plasma AlN

Hardware used: Beneq TFS-500
TMA, Trimethylaluminum, Trimethylalumane, AlMe3, Al(CH3)3
CAS#: 75-24-1
Where to buy precursor
N2, Nitrogen
CAS#: 7727-37-9
H2, Hydrogen
CAS#: 1333-74-0

Where to buy onsite generators

Deposition Temperature = 200C

Film/Plasma Properties

Characteristic: Chemical Composition, Impurities
Analysis: TOF-ERDA, Time-Of-Flight Elastic Recoil Detection Analysis
Diagnostic: -

Characteristic: Chemical Composition, Impurities
Analysis: FTIR, Fourier Transform InfraRed spectroscopy
Diagnostic: Perkin-Elmer Spectrum One

Characteristic: Density
Analysis: XRR, X-Ray Reflectivity
Diagnostic: PANalytical Xpert PRO MRD X-ray Diffractometer

Characteristic: Thickness
Analysis: XRR, X-Ray Reflectivity
Diagnostic: PANalytical Xpert PRO MRD X-ray Diffractometer

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: SERS, Surface Enhanced Raman Scattering
Diagnostic: -

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: XRD, X-Ray Diffraction
Diagnostic: PANalytical Xpert PRO MRD X-ray Diffractometer

Characteristic: Thickness
Analysis: Ellipsometry
Diagnostic: Philips Plasmos SD 2300

Characteristic: Refractive Index
Analysis: Ellipsometry
Diagnostic: Philips Plasmos SD 2300

Substrates

Silicon

Notes

585