Publication Information

Title:
Influence of plasma chemistry on impurity incorporation in AlN prepared by plasma enhanced atomic layer deposition
Type:
Journal
Info:
2013 J. Phys. D: Appl. Phys. 46 505502
Date:
2013-10-21

Author Information

Name Institution
Alexander Pyymaki PerrosAalto University
Hanna HakolaTampere University of Technology
Timo SajavaaraUniversity of Jyväskylä
Teppo HuhtioAalto University
Harri LipsanenAalto University

Films

Plasma AlN


Plasma AlN


Film/Plasma Properties

Characteristic: Chemical Composition, Impurities
Analysis: TOF-ERDA, Time-Of-Flight Elastic Recoil Detection Analysis

Characteristic: Chemical Composition, Impurities
Analysis: FTIR, Fourier Transform InfraRed spectroscopy

Characteristic: Density
Analysis: XRR, X-Ray Reflectivity

Characteristic: Thickness
Analysis: XRR, X-Ray Reflectivity

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: SERS, Surface Enhanced Raman Scattering

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: XRD, X-Ray Diffraction

Characteristic: Thickness
Analysis: Ellipsometry

Characteristic: Refractive Index
Analysis: Ellipsometry

Substrates

Silicon

Keywords

Notes

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