Introducing Plasma ALD, LLC's first in-house product.

An economical, compact inductively coupled plasma source.

Ideal for:
  • Plasma-Enhanced Atomic Layer Deposition
  • Thin Film Etch
  • Surface cleaning
  • Surface modification

Contact us for more information.


Comparison of AlF3 thin films grown by thermal and plasma enhanced atomic layer deposition

Type:
Journal
Info:
Journal of Vacuum Science & Technology A 40, 012404 (2022)
Date:
2021-11-22
DOI:
http://dx.doi.org/10.1116/6.0001468

Author Information

Name Institution
Daniel C. MessinaArizona State University
Brianna S. EllerArizona State University
Paul A. ScowenArizona State University
Robert J. NemanichArizona State University

Films

Thermal AlF

Hardware used: Custom Remote Inductively Coupled Plasma
TMA, Trimethylaluminum, Trimethylalumane, AlMe3, Al(CH3)3
CAS#: 75-24-1
Where to buy precursor
Hydrogen fluoride pyridine complex
CAS#: 62778-11-4
Where to buy precursor
Deposition Temperature = 100C

Plasma AlF

Hardware used: Custom Remote Inductively Coupled Plasma
TMA, Trimethylaluminum, Trimethylalumane, AlMe3, Al(CH3)3
CAS#: 75-24-1
Where to buy precursor
Hydrogen fluoride pyridine complex
CAS#: 62778-11-4
Where to buy precursor
H2, Hydrogen
CAS#: 1333-74-0

Where to buy onsite generators

Deposition Temperature = 100C

Film/Plasma Properties

Characteristic: Thickness
Analysis: Ellipsometry
Diagnostic: Film Sense FS-1 MWE

Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy
Diagnostic: VG-Scienta R3000

Substrates

Al2O3

Notes

1659