Publication Information

Title:
Phase-change properties of GeSbTe thin films deposited by plasma-enchanced atomic layer depositon
Type:
Journal
Info:
Nanoscale Research Letters (2015) 10:89
Date:
2015-02-12

Author Information

Name Institution
Sannian SongChinese Academy of Sciences
Dongning YaoChinese Academy of Sciences
Zhitang SongChinese Academy of Sciences
Lina GaoChinese Academy of Sciences
Zhonghua ZhangChinese Academy of Sciences
Le LiChinese Academy of Sciences
Lanlan ShenChinese Academy of Sciences
Liangcai WuChinese Academy of Sciences
Bo LiuChinese Academy of Sciences
Yan ChengChinese Academy of Sciences
Songlin FengChinese Academy of Sciences

Films



Film/Plasma Properties

Characteristic: Thickness
Analysis: SEM, Scanning Electron Microscopy

Characteristic: Chemical Composition, Impurities
Analysis: EDS, EDX, Energy Dispersive X-ray Spectroscopy

Characteristic: Microstructure
Analysis: SEM, Scanning Electron Microscopy

Characteristic: Electrical Properties
Analysis: I-V, Current-Voltage Measurements

Characteristic: Electrical Properties
Analysis: R-V, Resistance Voltage Measurements

Characteristic: Morphology, Roughness, Topography
Analysis: -

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: XRD, X-Ray Diffraction

Substrates

Si3N4
W

Keywords

Phase Change Memory

Notes

Beneq TFS 500 PEALD of SbTe and GeSbTe for phase change memory study.
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