Publication Information

Title: Phase-change properties of GeSbTe thin films deposited by plasma-enchanced atomic layer depositon

Type: Journal

Info: Nanoscale Research Letters (2015) 10:89

Date: 2015-02-12

DOI: http://dx.doi.org/10.1186/s11671-015-0815-5

Author Information

Name

Institution

Chinese Academy of Sciences

Chinese Academy of Sciences

Chinese Academy of Sciences

Chinese Academy of Sciences

Chinese Academy of Sciences

Chinese Academy of Sciences

Chinese Academy of Sciences

Chinese Academy of Sciences

Chinese Academy of Sciences

Chinese Academy of Sciences

Chinese Academy of Sciences

Films

Plasma Sb2Te3 using Beneq TFS-500

Deposition Temperature Range = 190-250C

7289-92-1

83817-35-0

1333-74-0

Plasma GeSbTe using Beneq TFS-500

Deposition Temperature Range = 190-250C

7344-40-3

7289-92-1

83817-35-0

1333-74-0

Film/Plasma Properties

Characteristic

Analysis

Diagnostic

Thickness

SEM, Scanning Electron Microscopy

-

Chemical Composition, Impurities

EDS, EDX, Energy Dispersive X-ray Spectroscopy

-

Microstructure

SEM, Scanning Electron Microscopy

-

Electrical Properties

I-V, Current-Voltage Measurements

Keithley 2400 Source Meter

Electrical Properties

R-V, Resistance Voltage Measurements

Keithley 2400 Source Meter

Morphology, Roughness, Topography

Unknown

-

Crystallinity, Crystal Structure, Grain Size, Atomic Structure

XRD, X-Ray Diffraction

-

Substrates

Si3N4

W

Keywords

Phase Change Memory

Notes

Beneq TFS 500 PEALD of SbTe and GeSbTe for phase change memory study.

333



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