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Phase-change properties of GeSbTe thin films deposited by plasma-enchanced atomic layer depositon
Type:
Journal
Info:
Nanoscale Research Letters (2015) 10:89
Date:
2015-02-12
Author Information
| Name | Institution |
|---|---|
| Sannian Song | Chinese Academy of Sciences |
| Dongning Yao | Chinese Academy of Sciences |
| Zhitang Song | Chinese Academy of Sciences |
| Lina Gao | Chinese Academy of Sciences |
| Zhonghua Zhang | Chinese Academy of Sciences |
| Le Li | Chinese Academy of Sciences |
| Lanlan Shen | Chinese Academy of Sciences |
| Liangcai Wu | Chinese Academy of Sciences |
| Bo Liu | Chinese Academy of Sciences |
| Yan Cheng | Chinese Academy of Sciences |
| Songlin Feng | Chinese Academy of Sciences |
Films
Plasma Sb2Te3
Plasma GeSbTe
Film/Plasma Properties
Characteristic: Thickness
Analysis: SEM, Scanning Electron Microscopy
Characteristic: Chemical Composition, Impurities
Analysis: EDS, EDX, Energy Dispersive X-ray Spectroscopy
Characteristic: Microstructure
Analysis: SEM, Scanning Electron Microscopy
Characteristic: Electrical Properties
Analysis: I-V, Current-Voltage Measurements
Characteristic: Electrical Properties
Analysis: R-V, Resistance Voltage Measurements
Characteristic: Morphology, Roughness, Topography
Analysis: -
Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: XRD, X-Ray Diffraction
Substrates
| Si3N4 |
| W |
Notes
| Beneq TFS 500 PEALD of SbTe and GeSbTe for phase change memory study. |
| 333 |