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Low-temperature atomic layer epitaxy of AlN ultrathin films by layer-by-layer, in-situ atomic layer annealing
Type:
Journal
Info:
Scientific Reports 7, Article number: 39717 (2016)
Date:
2016-11-25
Author Information
| Name | Institution |
|---|---|
| Huan-Yu Shih | National Taiwan University |
| Wei-Hao Lee | National Taiwan University |
| Wei-Chung Kao | National Taiwan University |
| Yung-Chuan Chuang | National Taiwan University |
| Ray-Ming Lin | Chang Gung University |
| Hsin-Chih Lin | National Taiwan University |
| Makoto Shiojiri | Kyoto Institute of Technology |
| Miin-Jang Chen | National Taiwan University |
Films
Film/Plasma Properties
Characteristic: Thickness
Analysis: Ellipsometry
Characteristic: Refractive Index
Analysis: Ellipsometry
Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: TEM, Transmission Electron Microscope
Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: XRD, X-Ray Diffraction
Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: XRD, X-Ray Diffraction
Characteristic: Morphology, Roughness, Topography
Analysis: AFM, Atomic Force Microscopy
Characteristic: Chemical Composition, Impurities
Analysis: AES, Auger Electron Spectroscopy
Characteristic: Morphology, Roughness, Topography
Analysis: SEM, Scanning Electron Microscopy
Characteristic: Mobility
Analysis: Hall effect/van der Pauw method
Substrates
| Sapphire |
Notes
| 875 |