Publication Information

Title:
Low-temperature atomic layer epitaxy of AlN ultrathin films by layer-by-layer, in-situ atomic layer annealing
Type:
Journal
Info:
Scientific Reports 7, Article number: 39717 (2016)
Date:
2016-11-25

Author Information

Name Institution
Huan-Yu ShihNational Taiwan University
Wei-Hao LeeNational Taiwan University
Wei-Chung KaoNational Taiwan University
Yung-Chuan ChuangNational Taiwan University
Ray-Ming LinChang Gung University
Hsin-Chih LinNational Taiwan University
Makoto ShiojiriKyoto Institute of Technology
Miin-Jang ChenNational Taiwan University

Films

Plasma AlN


Film/Plasma Properties

Characteristic: Thickness
Analysis: Ellipsometry

Characteristic: Refractive Index
Analysis: Ellipsometry

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: TEM, Transmission Electron Microscope

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: XRD, X-Ray Diffraction

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: XRD, X-Ray Diffraction

Characteristic: Morphology, Roughness, Topography
Analysis: AFM, Atomic Force Microscopy

Characteristic: Chemical Composition, Impurities
Analysis: AES, Auger Electron Spectroscopy

Characteristic: Morphology, Roughness, Topography
Analysis: SEM, Scanning Electron Microscopy

Characteristic: Mobility
Analysis: Hall effect/van der Pauw method

Substrates

Sapphire

Keywords

Notes

875