Publication Information

Title: Low-temperature atomic layer epitaxy of AlN ultrathin films by layer-by-layer, in-situ atomic layer annealing

Type: Journal

Info: Scientific Reports 7, Article number: 39717 (2016)

Date: 2016-11-25

DOI: http://dx.doi.org/10.1038/srep39717

Author Information

Name

Institution

National Taiwan University

National Taiwan University

National Taiwan University

National Taiwan University

Chang Gung University

National Taiwan University

Kyoto Institute of Technology

National Taiwan University

Films

Plasma AlN using Unknown

Deposition Temperature = 300C

75-24-1

7727-37-9

1333-74-0

Film/Plasma Properties

Characteristic

Analysis

Diagnostic

Thickness

Ellipsometry

Ellipso Technology Elli-SE

Refractive Index

Ellipsometry

Ellipso Technology Elli-SE

Crystallinity, Crystal Structure, Grain Size, Atomic Structure

TEM, Transmission Electron Microscope

FEI Tecnai G2 F20 S-Twin

Crystallinity, Crystal Structure, Grain Size, Atomic Structure

XRD, X-Ray Diffraction

PANalytical Xpert PRO MPD X-ray Diffractometer

Crystallinity, Crystal Structure, Grain Size, Atomic Structure

XRD, X-Ray Diffraction

Bruker D8 Advance

Morphology, Roughness, Topography

AFM, Atomic Force Microscopy

NT-MDT NTEGRA Spectra

Chemical Composition, Impurities

AES, Auger Electron Spectroscopy

JEOL JAMP-9510F

Morphology, Roughness, Topography

SEM, Scanning Electron Microscopy

FEI Nova 600i Nanolab

Mobility

Hall effect/van der Pauw method

Ecopia HMS-3000

Substrates

Sapphire

Keywords

Notes

875



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