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An economical, compact inductively coupled plasma source.

Ideal for:

  • Plasma-Enhanced Atomic Layer Deposition
  • Thin Film Etch
  • Surface cleaning
  • Surface modification

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Hydrogen plasma-enhanced atomic layer deposition of copper thin films

Type:
Journal
Info:
J. Vac. Sci. Technol. B 25(6), Nov/Dec 2007
Date:
2007-12-11

Author Information

Name Institution
Liqi WuState University of New York at Albany
Eric T. EisenbraunState University of New York at Albany

Films


Film/Plasma Properties

Characteristic: Density
Analysis: RBS, Rutherford Backscattering Spectrometry

Characteristic: Chemical Composition, Impurities
Analysis: RBS, Rutherford Backscattering Spectrometry

Characteristic: Thickness
Analysis: SEM, Scanning Electron Microscopy

Characteristic: Continuity
Analysis: SEM, Scanning Electron Microscopy

Characteristic: Conformality, Step Coverage
Analysis: SEM, Scanning Electron Microscopy

Characteristic: Chemical Composition, Impurities
Analysis: AES, Auger Electron Spectroscopy

Characteristic: Morphology, Roughness, Topography
Analysis: AFM, Atomic Force Microscopy

Characteristic: Resistivity, Sheet Resistance
Analysis: -

Characteristic: Adhesion
Analysis: Tape Test

Substrates

TaN
Ru
SiO2

Notes

38