Publication Information

Title: Hydrogen plasma-enhanced atomic layer deposition of copper thin films

Type: Journal

Info: J. Vac. Sci. Technol. B 25(6), Nov/Dec 2007

Date: 2007-12-11

DOI: http://dx.doi.org/10.1116/1.2779050

Author Information

Name

Institution

State University of New York at Albany

State University of New York at Albany

Films

Deposition Temperature Range = 50-250C

13395-16-9

1333-74-0

Film/Plasma Properties

Characteristic

Analysis

Diagnostic

Density

RBS, Rutherford Backscattering Spectrometry

Unknown

Chemical Composition, Impurities

RBS, Rutherford Backscattering Spectrometry

Unknown

Thickness

SEM, Scanning Electron Microscopy

LEO 1550

Continuity

SEM, Scanning Electron Microscopy

LEO 1550

Conformality, Step Coverage

SEM, Scanning Electron Microscopy

LEO 1550

Chemical Composition, Impurities

AES, Auger Electron Spectroscopy

Perkin Elmer PHI600

Morphology, Roughness, Topography

AFM, Atomic Force Microscopy

Thermomicroscopes Autoprobe CPResearch system

Resistivity, Sheet Resistance

Unknown

Signatone SYS-301 resistivity probing system

Adhesion

Scotch Tape Test

Unknown

Substrates

TaN

Ru

SiO2

Keywords

Copper

Metallic Thin Films

Thin Film

Atomic Layer Deposition

Resistivity

Notes

38



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