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Hydrogen plasma-enhanced atomic layer deposition of copper thin films

Type:
Journal
Info:
J. Vac. Sci. Technol. B 25(6), Nov/Dec 2007
Date:
2007-12-11
DOI:
http://dx.doi.org/10.1116/1.2779050

Author Information

Name Institution
Liqi WuState University of New York at Albany
Eric T. EisenbraunState University of New York at Albany

Films

Plasma Cu

Hardware used: TEL Phoenix CVD cluster tool
copper(II) acetylacetonate, bis(2,4-pentanedionato) copper(II), cupric acetylacetonate, Cu(acac)2
CAS#: 13395-16-9
H2, Hydrogen
CAS#: 1333-74-0
Deposition Temperature Range = 50-250C

Film/Plasma Properties

Characteristic: Density
Analysis: RBS, Rutherford Backscattering Spectrometry
Diagnostic: -

Characteristic: Chemical Composition, Impurities
Analysis: RBS, Rutherford Backscattering Spectrometry
Diagnostic: -

Characteristic: Thickness
Analysis: SEM, Scanning Electron Microscopy
Diagnostic: LEO 1550

Characteristic: Continuity
Analysis: SEM, Scanning Electron Microscopy
Diagnostic: LEO 1550

Characteristic: Conformality, Step Coverage
Analysis: SEM, Scanning Electron Microscopy
Diagnostic: LEO 1550

Characteristic: Chemical Composition, Impurities
Analysis: AES, Auger Electron Spectroscopy
Diagnostic: Perkin Elmer PHI600

Characteristic: Morphology, Roughness, Topography
Analysis: AFM, Atomic Force Microscopy
Diagnostic: Thermomicroscopes Autoprobe CPResearch system

Characteristic: Resistivity, Sheet Resistance
Analysis: -
Diagnostic: Signatone SYS-301 resistivity probing system

Characteristic: Adhesion
Analysis: Tape Test
Diagnostic: -

Substrates

TaN
Ru
SiO2

Notes

38