Characterization of Ultrathin PEALD-Grown RuCo Films for Diffusion Barrier and Copper Direct-Plate Applications

Type:
Journal
Info:
ECS Transactions, 35 (20) 17-24 (2011)
Date:
2011-07-01
DOI:
http://dx.doi.org/10.1149/1.3646496

Author Information

Name Institution
Daniel V. GreenslitState University of New York at Albany
Eric T. EisenbraunState University of New York at Albany

Films

Plasma Ru

Hardware used: Aixtron Genus Stratagem 200
Ethylcyclopentadienyl pyrrolyl ruthenium
CAS#: 0-0-0
NH3, Ammonia
CAS#: 7664-41-7
Deposition Temperature Range N/A

Plasma Co

Hardware used: Aixtron Genus Stratagem 200
cobaltacene, bis(cyclopentadienyl)cobalt, Cp2Co
CAS#: 1277-43-6
Where to buy precursor
H2, Hydrogen
CAS#: 1333-74-0

Where to buy onsite generators

Deposition Temperature Range N/A

Film/Plasma Properties

Characteristic: Microstructure
Analysis: TEM, Transmission Electron Microscope
Diagnostic: -

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: Electron Diffraction
Diagnostic: -

Characteristic: Conformality, Step Coverage
Analysis: SEM, Scanning Electron Microscopy
Diagnostic: -

Characteristic: Resistivity, Sheet Resistance
Analysis: Four-point Probe
Diagnostic: -

Characteristic: Diffusion Barrier Properties
Analysis: TVS, Triangle Voltage Sweep
Diagnostic: -

Substrates

SiO2

Notes

1356