
Aluminum nitride thin films deposited by hydrogen plasma enhanced and thermal atomic layer deposition
Type:
Journal
Info:
Surface & Coatings Technology 347 (2018) 181 - 190
Date:
2018-04-11
Author Information
| Name | Institution |
|---|---|
| L. Tian | Grenoble Alps University (UGA) |
| S. Ponton | Grenoble Alps University (UGA) |
| M. Benz | Grenoble Alps University (UGA) |
| Alexandre Crisci | Grenoble Alps University (UGA) |
| R. Reboud | Grenoble Alps University (UGA) |
| G. Giusti | SIL'TRONIX Silicon Technologies |
| Fabien Volpi | Grenoble Alps University (UGA) |
| L. Rapenne | Grenoble Alps University (UGA) |
| Christophe Vallée | Grenoble Alps University (UGA) |
| M. Pons | Grenoble Alps University (UGA) |
| A. Mantoux | Grenoble Alps University (UGA) |
| C. Jiménez | Grenoble Alps University (UGA) |
| Elisabeth Blanquet | Grenoble Alps University (UGA) |
Films
Plasma AlN
Thermal AlN
Film/Plasma Properties
Characteristic: Plasma Species
Analysis: OES, Optical Emission Spectroscopy
Characteristic: Chemical Composition, Impurities
Analysis: EPMA, Electron Probe Micro Analyzer
Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy
Characteristic: Chemical Composition, Impurities
Analysis: EDS, EDX, Energy Dispersive X-ray Spectroscopy
Characteristic: Morphology, Roughness, Topography
Analysis: SEM, Scanning Electron Microscopy
Characteristic: Morphology, Roughness, Topography
Analysis: AFM, Atomic Force Microscopy
Characteristic: Images
Analysis: TEM, Transmission Electron Microscope
Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: XRD, X-Ray Diffraction
Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: GIXRD, Grazing Incidence X-Ray Diffraction
Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: Electron Diffraction
Characteristic: Thickness
Analysis: XRR, X-Ray Reflectivity
Characteristic: Density
Analysis: XRR, X-Ray Reflectivity
Characteristic: Thickness
Analysis: Ellipsometry
Characteristic: Resistivity, Sheet Resistance
Analysis: Four-point Probe
Substrates
| SiC |
| Si(100) |
| BSG, BoroSilicate Glass |
Notes
| 1526 |
