ALD-grown Ultrathin AlN Film for Passivation of AlGaN/GaN HEMTs

Type:
Journal
Info:
CS MANTECH Conference, April 23rd - 26th, 2012, Boston, Massachusetts, USA
Date:
2012-04-23
DOI:
http://gaasmantech.com/Digests/2012/papers/11a.3.089.pdf

Author Information

Name Institution
Sen HuangHong Kong University of Science and Technology
Qimeng JiangHong Kong University of Science and Technology
Shu YangHong Kong University of Science and Technology
Chunhua ZhouHong Kong University of Science and Technology
Kevin J. ChenHong Kong University of Science and Technology

Films

Plasma AlN

Hardware used: Unknown
TMA, trimethyl aluminum, AlMe3
CAS#: 75-24-1
Where to buy precursor
N2, Nitrogen
CAS#: 7727-37-9
H2, Hydrogen
CAS#: 1333-74-0

Where to buy onsite generators

Deposition Temperature = 300C

Film/Plasma Properties

Characteristic: Images
Analysis: TEM, Transmission Electron Microscope
Diagnostic: -

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: TEM, Transmission Electron Microscope
Diagnostic: -

Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy
Diagnostic: -

Characteristic: Transistor Characteristics
Analysis: Transistor Characterization
Diagnostic: -

Substrates

GaN

Keywords

Passivation

Notes

628