Publication Information

Title:
ALD-grown Ultrathin AlN Film for Passivation of AlGaN/GaN HEMTs
Type:
Journal
Info:
CS MANTECH Conference, April 23rd - 26th, 2012, Boston, Massachusetts, USA
Date:
2012-04-23

Author Information

Name Institution
Sen HuangHong Kong University of Science and Technology
Qimeng JiangHong Kong University of Science and Technology
Shu YangHong Kong University of Science and Technology
Chunhua ZhouHong Kong University of Science and Technology
Kevin J. ChenHong Kong University of Science and Technology

Films

Plasma AlN


Film/Plasma Properties

Characteristic: Images
Analysis: TEM, Transmission Electron Microscope

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: TEM, Transmission Electron Microscope

Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy

Characteristic: Transistor Characteristics
Analysis: Transistor Characterization

Substrates

GaN

Keywords

Passivation

Notes

628