Publication Information

Title: ALD-grown Ultrathin AlN Film for Passivation of AlGaN/GaN HEMTs

Type: Journal

Info: CS MANTECH Conference, April 23rd - 26th, 2012, Boston, Massachusetts, USA

Date: 2012-04-23

DOI: http://gaasmantech.com/Digests/2012/papers/11a.3.089.pdf

Author Information

Name

Institution

Hong Kong University of Science and Technology

Hong Kong University of Science and Technology

Hong Kong University of Science and Technology

Hong Kong University of Science and Technology

Hong Kong University of Science and Technology

Films

Plasma AlN using Unknown

Deposition Temperature = 300C

75-24-1

7727-37-9

1333-74-0

Film/Plasma Properties

Characteristic

Analysis

Diagnostic

Images

TEM, Transmission Electron Microscope

-

Crystallinity, Crystal Structure, Grain Size, Atomic Structure

TEM, Transmission Electron Microscope

-

Chemical Composition, Impurities

XPS, X-ray Photoelectron Spectroscopy

-

Transistor Characteristics

Transistor Characterization

-

Substrates

GaN

Keywords

Passivation

Notes

628



Shortcuts



© 2014-2019 plasma-ald.com