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Initial and steady-state Ru growth by atomic layer deposition studied by in situ Angle Resolved X-ray Photoelectron Spectroscopy
Innovative remote plasma source for atomic layer deposition for GaN devices
Influence of plasma species on the early-stage growth kinetics of epitaxial InN grown by plasma-enhanced atomic layer deposition
Optical in situ monitoring of plasma-enhanced atomic layer deposition process
The role of active species in the N2 and N2-H2 RF afterglows on selective surface nitriding of ALD-grown TiO2 films
ALD-grown Ultrathin AlN Film for Passivation of AlGaN/GaN HEMTs
Type:
Journal
Info:
CS MANTECH Conference, April 23rd - 26th, 2012, Boston, Massachusetts, USA
Date:
2012-04-23
Author Information
| Name | Institution |
|---|---|
| Sen Huang | Hong Kong University of Science and Technology |
| Qimeng Jiang | Hong Kong University of Science and Technology |
| Shu Yang | Hong Kong University of Science and Technology |
| Chunhua Zhou | Hong Kong University of Science and Technology |
| Kevin J. Chen | Hong Kong University of Science and Technology |
Films
Film/Plasma Properties
Characteristic: Images
Analysis: TEM, Transmission Electron Microscope
Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: TEM, Transmission Electron Microscope
Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy
Characteristic: Transistor Characteristics
Analysis: Transistor Characterization
Substrates
| GaN |
Keywords
| Passivation |
Notes
| 628 |