ALD-grown Ultrathin AlN Film for Passivation of AlGaN/GaN HEMTs
Type:
Journal
Info:
CS MANTECH Conference, April 23rd - 26th, 2012, Boston, Massachusetts, USA
Date:
2012-04-23
Author Information
| Name | Institution |
|---|---|
| Sen Huang | Hong Kong University of Science and Technology |
| Qimeng Jiang | Hong Kong University of Science and Technology |
| Shu Yang | Hong Kong University of Science and Technology |
| Chunhua Zhou | Hong Kong University of Science and Technology |
| Kevin J. Chen | Hong Kong University of Science and Technology |
Films
Film/Plasma Properties
Characteristic: Images
Analysis: TEM, Transmission Electron Microscope
Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: TEM, Transmission Electron Microscope
Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy
Characteristic: Transistor Characteristics
Analysis: Transistor Characterization
Substrates
| GaN |
Notes
| 628 |