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Plasma-enhanced atomic layer deposition of gallium nitride thin films on fluorine-doped tin oxide glass substrate for future photovoltaic application
Plasma enhanced atomic layer deposition of thin film Li1+xMn2-xO4 for realization of all solid-state 3D lithium-ion microbatteries
AlN PEALD with TMA and forming gas: study of plasma reaction mechanisms
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ALD-grown Ultrathin AlN Film for Passivation of AlGaN/GaN HEMTs
Type:
Journal
Info:
CS MANTECH Conference, April 23rd - 26th, 2012, Boston, Massachusetts, USA
Date:
2012-04-23
Author Information
| Name | Institution |
|---|---|
| Sen Huang | Hong Kong University of Science and Technology |
| Qimeng Jiang | Hong Kong University of Science and Technology |
| Shu Yang | Hong Kong University of Science and Technology |
| Chunhua Zhou | Hong Kong University of Science and Technology |
| Kevin J. Chen | Hong Kong University of Science and Technology |
Films
Film/Plasma Properties
Characteristic: Images
Analysis: TEM, Transmission Electron Microscope
Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: TEM, Transmission Electron Microscope
Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy
Characteristic: Transistor Characteristics
Analysis: Transistor Characterization
Substrates
| GaN |
Keywords
| Passivation |
Notes
| 628 |
Popular Precursors
Top Authors
| Erwin (W.M.M.) Kessels |
| Hyeongtag Jeon |
| Hyungjun Kim |
| Mauritius C. M. (Richard) van de Sanden |
| Christophe Detavernier |