Title: ALD-grown Ultrathin AlN Film for Passivation of AlGaN/GaN HEMTs
Type: Journal
Info: CS MANTECH Conference, April 23rd - 26th, 2012, Boston, Massachusetts, USA
Date: 2012-04-23
DOI: http://gaasmantech.com/Digests/2012/papers/11a.3.089.pdf
Name
Institution
Hong Kong University of Science and Technology
Hong Kong University of Science and Technology
Hong Kong University of Science and Technology
Hong Kong University of Science and Technology
Hong Kong University of Science and Technology
Characteristic
Analysis
Diagnostic
Images
TEM, Transmission Electron Microscope
-
Crystallinity, Crystal Structure, Grain Size, Atomic Structure
TEM, Transmission Electron Microscope
-
Chemical Composition, Impurities
XPS, X-ray Photoelectron Spectroscopy
-
Transistor Characteristics
Transistor Characterization
-
GaN
Passivation
628
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