Fabrication and properties of AlN film on GaN substrate by using remote plasma atomic layer deposition method
Type:
Journal
Info:
Electronic Materials Letters, Vol. 5, No. 2 (2009), pp. 83--86
Date:
2009-06-01
Author Information
| Name | Institution |
|---|---|
| Kwang-Ho Kim | Cheongju University |
| No-Won Kwak | Cheongju University |
| Soo Hong Lee | Sejong University |
Films
Plasma AlN
Film/Plasma Properties
Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: XRD, X-Ray Diffraction
Characteristic: Leakage Current
Analysis: I-V, Current-Voltage Measurements
Characteristic: Interface Trap Density
Analysis: C-V, Capacitance-Voltage Measurements
Substrates
| GaN |
Notes
| 742 |