Publication Information

Title:
Fabrication and properties of AlN film on GaN substrate by using remote plasma atomic layer deposition method
Type:
Journal
Info:
Electronic Materials Letters, Vol. 5, No. 2 (2009), pp. 83--86
Date:
2009-06-01

Author Information

Name Institution
Kwang-Ho KimCheongju University
No-Won KwakCheongju University
Soo Hong LeeSejong University

Films

Plasma AlN


Film/Plasma Properties

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: XRD, X-Ray Diffraction

Characteristic: Leakage Current
Analysis: I-V, Current-Voltage Measurements

Characteristic: Interface Trap Density
Analysis: C-V, Capacitance-Voltage Measurements

Substrates

GaN

Keywords

Notes

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