Publication Information

Title: Fabrication and properties of AlN film on GaN substrate by using remote plasma atomic layer deposition method

Type: Journal

Info: Electronic Materials Letters, Vol. 5, No. 2 (2009), pp. 83--86

Date: 2009-06-01

DOI: http://dx.doi.org/10.3365/eml.2009.06.083

Author Information

Name

Institution

Cheongju University

Cheongju University

Sejong University

Films

Plasma AlN using Custom ICP

Deposition Temperature Range = 25-500C

75-24-1

7727-37-9

1333-74-0

Film/Plasma Properties

Characteristic

Analysis

Diagnostic

Crystallinity, Crystal Structure, Grain Size, Atomic Structure

XRD, X-Ray Diffraction

Unknown

Leakage Current

I-V, Current-Voltage Measurements

HP 4140

Interface Trap Density

C-V, Capacitance-Voltage Measurements

HP 4192A

Substrates

GaN

Keywords

Notes

742



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